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Method and apparatus for MOSFET device model parameter extraction

A technology of parameter extraction and device model, applied in the direction of single semiconductor device testing, etc., can solve the problems of device damage, narrow offset range, affecting test results, etc., and achieve the effect of ensuring integrity, facilitating extraction, and ensuring accuracy

Active Publication Date: 2017-10-10
SOI MICRO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] For a MOSFET whose drain-body junction breakdown voltage is less than twice Vdd, if Vbb is taken as Vdd, breakdown will occur when measuring item 2), resulting in device damage. Although the device does not lose its MOSFET characteristics, the device characteristics will change. , which will affect the subsequent test results; in this way, the test data will be unreliable, and subsequent parameter extraction will be meaningless
If vbb is selected as the breakdown voltage minus vdd, the device will not break down, but the test in item 1) will be incomplete, and the range of the test line offset is narrow, which will affect the extraction of the line offset effect parameters and cannot meet the parameters Extract requirements for data
[0010] Therefore, the prior art has the defect of not being able to fully extract the lining offset effect parameters without damaging the device and affecting the device parameter extraction results.

Method used

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  • Method and apparatus for MOSFET device model parameter extraction
  • Method and apparatus for MOSFET device model parameter extraction
  • Method and apparatus for MOSFET device model parameter extraction

Examples

Experimental program
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Effect test

Embodiment 1

[0054] This embodiment provides a method for extracting model parameters of a MOSFET device, including: based on the drain-body junction breakdown voltage of the MOSFET device, different body terminal biases are used in curve tests under different body biases.

[0055] As an optional implementation manner, different body terminal biases are used in curve tests under different body biases based on the drain-body junction breakdown voltage of the MOSFET device, including:

[0056] Performing a drain-body junction breakdown test to obtain the drain-body junction breakdown voltage Vdb of the MOSFET device;

[0057] Determining a voltage less than the difference between the drain-body junction breakdown voltage Vdb and the power supply voltage Vdd of the MOSFET device, as the body terminal bias voltage Vbb of the curve test of the MOSFET device; the determination of Vbb ensures that the characteristics of the device are consistent. Affected, the accuracy of the test data is guarant...

Embodiment 2

[0087] like figure 1 As shown, the present embodiment provides a device for extracting MOSFET device model parameters, including:

[0088] A voltage acquisition unit 11, configured to acquire voltages used in curve tests under different body deviations;

[0089] The curve test unit 12 is used to perform curve tests under different body biases according to the voltage determined by the voltage acquisition unit to obtain test data;

[0090] The parameter extraction unit 13 is configured to extract the parameters of the MOSFET device model according to the test data obtained by the curve test unit.

[0091] As an optional implementation manner, the voltage acquisition unit includes:

[0092] A first voltage obtaining module, configured to obtain the drain-body junction breakdown voltage Vdb of the MOSFET device;

[0093] The second voltage acquisition module is used to determine a voltage that is less than the difference between the drain-body junction breakdown voltage Vdb ob...

Embodiment approach

[0101] As an optional implementation manner, the second voltage acquisition module includes:

[0102] A calculation module, configured to divide the difference (Vdb-Vdd) between the drain-body junction breakdown voltage Vdb obtained by the first voltage acquisition module and the power supply voltage Vdd of the MOSFET device into n equal parts, each of which is d;

[0103] Body-side bias voltage determination module, used to calculate and obtain (n-1)*d as the body-side bias voltage Vbb of the curve test of the MOSFET device;

[0104] Among them, n is a natural number.

[0105] It can be seen from the above-mentioned embodiments that the beneficial effects produced by the present invention are: the embodiment of the present invention provides a test method for extracting the parameters of the MOSFET device model, by testing the drain-body junction characteristics of the MOS device, the breakdown voltage Vdb is obtained, and Vbb, Its value is less than Vdb-Vdd; the determinati...

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Abstract

The invention belongs to the device modeling technology field and relates to a method and an apparatus for MOSFET device model parameter extraction. The method comprises: based on the leakage body of the MOSFET device, supplying a breakdown voltage; and utilizing different body-end biases in curve tests in different body biases. The apparatus comprises: a voltage obtaining unit used to obtain the voltage adopted in the curve tests in different body biases; a curve testing unit used to carry out curve tests in different body biases according to the voltage determined by the voltage obtaining unit and to obtain the testing data; and a parameter extraction unit used to carry out MOSFET device model parameter extraction based on the testing data obtained by the curve testing unit. With the method and the apparatus of the invention, it is possible to resolve the technical problems in the prior art that the body effect cannot be considered and that the body effect parameter extraction compromises the parameter extraction result, therefore, ensuring a correct MOS device testing result and the consideration of the body effect parameter extraction.

Description

technical field [0001] The invention belongs to the technical field of device modeling, in particular to a method and device for extracting parameters of a MOSFET device model. Background technique [0002] Lining offset effect (also known as body effect) is one of the most important second-order effects of MOSFET (Metal Oxide Semiconductor Field Effect Transistor Metal Oxide Semiconductor Field Effect Transistor) devices. For NMOS, negative bias at the body end will lead to threshold voltage The generation of phenomena such as increase, the extraction of parameters related to the offset effect is extremely important in the extraction of MOSFET device model parameters. [0003] Taking PMOS as an example, according to the BSIM (Berkeley short-channel IGFET model Berkeley short-channel insulated gate field-effect transistor model) manual, the following tests are generally required for parameter extraction: [0004] 1) Ids_Vgs@vds=-0.05at different vbs test, that is, the test ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
Inventor 卜建辉李莹罗家俊韩郑生
Owner SOI MICRO CO LTD