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Method of reading the data stored in the flash memory, memory controller and system

A memory controller and memory technology, applied in read-only memory, static memory, information storage, etc., can solve problems such as long reading time and multiple storage spaces

Inactive Publication Date: 2017-10-10
SILICON MOTION INC (CN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, storing all the information obtained using different control gate voltage settings may require more memory space
In addition, using different control gate voltage settings to read the flash memory may cause a long read time, therefore, a more efficient read or decode process is required

Method used

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  • Method of reading the data stored in the flash memory, memory controller and system
  • Method of reading the data stored in the flash memory, memory controller and system
  • Method of reading the data stored in the flash memory, memory controller and system

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Embodiment Construction

[0042]Certain terms are used in the specification and subsequent claims to refer to particular elements. It should be understood by those skilled in the art that manufacturers may refer to the same element by different terms. This description and subsequent patent applications do not use the difference in name as the way to distinguish components, but the difference in function of the components as the basis for distinction. The "comprising" mentioned throughout the specification and subsequent claims is an open term, so it should be interpreted as "including but not limited to". In addition, the term "coupled" herein includes any direct and indirect means of electrical connection. Therefore, if it is described that a first device is electrically connected to a second device, it means that the first device may be directly connected to the second device, or indirectly connected to the second device through other devices or connection means.

[0043] Please note that reading t...

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Abstract

According to an embodiment of the present invention, a method for reading data stored in a flash memory is disclosed, the method comprising: controlling the flash memory to perform a first reading on a first memory paging of the flash memory Taking a first codeword of the first memory paging; obtaining a first set of approximate ratios corresponding to the first codeword according to a first approximation ratio; comparing the first set of approximate ratios And if the error correction operation indicates a non-correctable result based on the first set of approximations than the corresponding value, the first codeword is obtained according to a second approximation rule The two sets of approximate than the corresponding value; and according to the second set of approximate than the corresponding value of the error correction operation.

Description

[0001] This application is a divisional application of the Chinese application number 201310056538.X, the application date is February 21, 2013, and the title is "A method for reading data stored in a flash memory, a memory controller and a system". 【Technical field】 [0002] The present invention relates to reading data stored in a flash memory, in particular to a binary digit of a bit sequence (bit sequence) read out by referring to a memory cell of the flash memory A method and a memory controller for reading data stored in a flash memory with a binary digit distribution characteristic. 【Background technique】 [0003] Flash memory can be electronically erased (erase) and written / programmed (program) for data storage, and is widely used in memory card (memory card), solid-state drive (solid-state drive) and portable multimedia player, etc. Since the flash memory is a non-volatile memory, no additional power is required to maintain the information stored in the flash memor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G06F11/10
CPCG06F11/1072G11C16/26
Inventor 杨宗杰
Owner SILICON MOTION INC (CN)
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