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Calibration method of edge etching machine

A calibration method and crystal edge technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as large measurement errors, achieve the effects of fewer steps, high efficiency, and improved measurement accuracy

Active Publication Date: 2019-07-23
WUHAN XINXIN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for calibrating a crystal edge etching machine to solve problems such as large measurement errors in the prior art

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  • Calibration method of edge etching machine
  • Calibration method of edge etching machine
  • Calibration method of edge etching machine

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Embodiment Construction

[0030] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0031] The edge etching machine is a machine specially used to etch the edge of the wafer. Since the position of the wafer placed on the edge etching machine will be offset, there will be a problem of inaccurate wafer positioning. Therefore, when the oxide layer on the edge of the wafer is etched, the specification of the etched oxide layer will not meet the requirements, and the reliability of the final product will be reduced. Wafer centering is required before batch etching of the wafer edges each time. One c...

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Abstract

The invention provides a method for calibrating a wafer edge etching machine, comprising providing a test wafer, on which an oxide layer is formed; performing edge etching on the oxide layer of the test wafer to form a wafer Edge notch; measure the parallelism between the edge notch and the side wall of the wafer to obtain the center of the notch on the edge; compare the center of the notch on the edge with the center of the test wafer, and determine the distance Whether it meets the control requirements. Compared with the prior art, the calibration method of the crystal edge etching machine provided by the present invention has fewer steps, which reduces the occurrence of measurement failures, thereby improving the alignment efficiency, and has higher measurement accuracy than the prior art high.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for calibrating a crystal edge etching machine. Background technique [0002] With the development of semiconductor technology, the size of semiconductor devices is constantly shrinking, and the corresponding technology nodes are constantly improving, and the impact of afer bevel on the manufacturing process is increasing. [0003] Bevel etch technology is more and more popular in the semiconductor manufacturing industry because it can improve defects (Defect), breakdown (Arcing) and excessive stress (Excessive stress) and improve the yield of semiconductor devices manufactured. Pay attention to. However, if the edge etching is not well implemented, especially when the edge etching distance cannot be strictly controlled, the effects of improving defects, breakdown, and excess stress will not be achieved. In the prior art, various edge etching technical soluti...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/68
CPCH01L21/68
Inventor 刘孟勇
Owner WUHAN XINXIN SEMICON MFG CO LTD