Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Abrasive pad, method for forming same, method for monitoring grinding

A technology of grinding pad and grinding layer, which is applied to grinding machine tools, grinding tools, grinding devices, etc., can solve the problem of low effective utilization rate of grinding pads, maximize effective utilization rate, accurately monitor usage, and avoid damage.

Active Publication Date: 2020-03-10
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the monitoring of the wear degree of the polishing pad in the prior art makes the effective utilization rate of the polishing pad low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Abrasive pad, method for forming same, method for monitoring grinding
  • Abrasive pad, method for forming same, method for monitoring grinding
  • Abrasive pad, method for forming same, method for monitoring grinding

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] As mentioned in the background art, the effective utilization rate of the polishing pad in the prior art is low.

[0033] In one embodiment, the wear degree of the polishing pad is judged according to the following manner: (1) judge the wear degree of the polishing pad according to the use time of the polishing pad; (2) judge the loss of the polishing pad according to the number of wafers polished by using the polishing pad (3) According to the use time of the polishing pad and the number of wafers polished by the polishing pad, whichever arrives first judges the degree of wear of the polishing pad.

[0034] Corresponding, abrasive pads, ref. figure 1 , comprising: an adhesive layer 100 ; a matrix layer 110 located on the adhesive layer 100 ; an abrasive layer 120 located on the matrix layer 110 .

[0035] Research finds that the reason that the effective utilization rate of grinding pad is low in the above-mentioned embodiment is:

[0036] The monitoring of the degre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a grinding cushion and a formation method thereof, wherein the grinding cushion comprises a grinding layer and a barrier layer; the grinding layer has a third surface and a fourth surface opposite to each other; the fourth surface is used for grinding the surface to be ground; the barrier layer is embedded into the grinding layer; a distance between the barrier layer and the fourth surface is larger than zero; and the barrier layer is suitable for sending a signal for changing the grinding cushion. As the grinding cushion comprises the barrier layer, the barrier layer is suitable for sending the signal for changing the grinding cushion, so that the effective utilization ratio of the grinding cushion is maximized.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a grinding pad, a forming method thereof, and a grinding monitoring method. Background technique [0002] Chemical Mechanical Polish (CMP) is an important process in the manufacturing process of semiconductor devices. It is completed by chemical mechanical polishing machines and is mainly used for planarization of the wafer surface. The polishing pad is one of the important tools in the chemical mechanical polishing process. The polishing pad needs to be glued to the polishing platform of the chemical mechanical polishing machine during application, and then the polishing head is pressed against the wafer to grind on the polishing pad. [0003] During the grinding process, the grinding pad will wear out. As the wear degree of the grinding pad increases, the grinding rate decreases, so the grinding pad needs to be replaced frequently to maintain the stability of the grind...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/11B24B37/005B24B37/34
CPCB24B37/005B24B37/11B24B37/34
Inventor 曹均助刘洪涛
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com