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Solid-state storage device and state prediction method thereof

A solid-state storage and state parameter technology, applied in static memory, information storage, read-only memory, etc., can solve the problem that the error correction process takes a long time, the reading speed of the solid-state storage device 10 decreases, and the retry reading cannot be directly obtained voltage group etc.

Active Publication Date: 2017-12-08
SOLID STATE STORAGE TECH CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Obviously, in the process of decoding process B, the controller 101 can only provide the retry reading voltage group to the non-volatile memory 105 according to the order of the retry table 106, and it cannot directly obtain suitable retry reading voltage set, so the controller 101 will spend a considerable amount of time providing an unsuitable retry read voltage set to the non-volatile memory 105
[0025] Similarly, when the solid-state storage device 10 enters the decoding process C of reading and retrying, the above-mentioned situation will also occur, causing the error correction process of the entire solid-state storage device 10 to take a long time, making the reading of the solid-state storage device 10 The speed (read speed) dropped significantly

Method used

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  • Solid-state storage device and state prediction method thereof
  • Solid-state storage device and state prediction method thereof
  • Solid-state storage device and state prediction method thereof

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Embodiment Construction

[0035] Below in conjunction with accompanying drawing, structural principle and working principle of the present invention are specifically described:

[0036] The invention provides a solid state storage device and a state prediction method thereof. Before the solid-state storage device leaves the factory, collect various state parameters for the non-volatile memory, and use machine learning algorithm (machine learning algorithm) to find out multiple prediction equations about the non-volatile memory, and record them in the solid-state storage device middle. After the solid-state storage device leaves the factory, according to the real-time state parameters and related prediction equations, the current and future reading voltage sets of the non-volatile memory and the suitable decoding process can be quickly predicted. In addition, the decoding process A, decoding process B and decoding process C described below are the same as Figure 2B .

[0037] Please refer to image...

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Abstract

The invention discloses a solid-state storage device and a state prediction method thereof. The solid-state storage device comprises a nonvolatile memory and a controller, wherein the nonvolatile memory comprises a first block; the controller is connected to the nonvolatile memory and comprises an equation storage circuit; multiple prediction equations are stored in the equation storage circuit; and the controller performs matching on a first prediction equation among the prediction equations according to multiple state parameters corresponding to the first block, and the first prediction equation is used for predicting a reading voltage deviation of the first block.

Description

technical field [0001] The present invention relates to a solid state storage device and its control method, and in particular to a solid state storage device and its state prediction method. Background technique [0002] As we all know, solid state storage device (solid state device) has been widely used in various electronic products, such as SD card, solid state hard disk and so on. Generally speaking, a solid-state storage device is composed of a controller and a non-volatile memory. [0003] Please refer to figure 1 , which is a schematic diagram of a solid-state storage device. The solid-state storage device 10 is connected to a host 14 via an external bus 12, wherein the external bus 12 can be a USB bus, a SATA bus, a PCIe bus, and the like. Furthermore, the solid-state storage device 10 includes a controller 101 and a non-volatile memory 105 . Wherein, the controller 101 is connected to the non-volatile memory 105 via an internal bus 107, and is used to store the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06G11C29/42
CPCG11C16/06G11C29/42G06F11/1048G11C7/04G11C11/5642G11C16/349G11C29/021G11C29/028G11C2029/0409G11C2029/0411G11C2211/5644G06F3/0611G06F3/0619G06F3/064G06F3/0652G06F3/0653G06F3/0679G06F11/1068G11C11/5628G11C16/0408G11C16/0483G11C16/10G11C16/26G11C29/52
Inventor 曾士家傅仁傑
Owner SOLID STATE STORAGE TECH CORP
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