IGBT device

Abstract

The invention provides an IGBT device and belongs to the power device technology field. The device comprises a metallization collector electrode, a first conductive type semiconductor current collection area, a second conductive type semiconductor drift area and a metal emitting electrode which are successively stacked from bottom to top. The second conductive type semiconductor drift area possesses a gate structure, a first conductive type semiconductor base area, a first conductive type semiconductor contact area in the first conductive type semiconductor base area and a second conductive type semiconductor emitter area, wherein the first conductive type semiconductor base area, the first conductive type semiconductor contact area in the first conductive type semiconductor base area and the second conductive type semiconductor emitter area are located on two sides of the gate structure. A dosage concentration of the first conductive type semiconductor base area is gradually increased from a direction which is close to the metal emitting electrode to a direction which is far away from the metal emitting electrode. In the invention, through reasonably adjusting the dosage concentration of the base area, the concentration which is close to an emitter area side is low so as to form a base-area less minority deceleration field and restrain latch generation; and under the condition that a normal work characteristic of an IGBT is not influenced, a latch resistance capability of the IGBT device is increased.

Description

technical field [0001] The invention belongs to the technical field of power devices, in particular to an IGBT device with high latch-up resistance. Background technique [0002] IGBT is a representative type of power semiconductor devices. Because of its advantages of high withstand voltage, low on-resistance, easy driving, and fast switching speed, it is widely used in switching power supplies, frequency conversion speed regulation, inverters, etc. There are important applications in the field of power. However, the latch-up problem is one of the important reasons that threaten the reliability of IGBTs. [0003] Such as figure 1 and figure 2 Shown are the structural schematic diagram and the equivalent circuit of the traditional N-channel IGBT device respectively. Depend on figure 1 It can be seen that the IGBT structure contains the N + Emitter, P-type base, N - drift region and P + The N-P-N-P four-layer tri-crystal thyristor structure composed of the collector ...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems caused by the IGBT latch-up effect of the parasitic thyristor in the prior art to the reliability of the device, the present invention provides an IGBT device with high latch-up resistance

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