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Light-emitting diode chip

A light-emitting diode and chip technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of changing electrical characteristics, reducing the efficiency of light-emitting diode chips, reflection effects, etc., and achieve the effect of good conductivity

Active Publication Date: 2017-12-26
OSRAM OPTO SEMICON GMBH & CO OHG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the reflection at the interface between the reflective film layer and the semiconductor layer sequence can be influenced
This results in a reduction in light outcoupling and thus in the efficiency of the LED chip
In addition, due to the diffusion of platinum to the interface between the semiconductor layer sequence and the reflective film layer, the electrical properties can also be changed.

Method used

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  • Light-emitting diode chip

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Experimental program
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Embodiment Construction

[0029] exist figure 1 The light-emitting diode chip 1 shown in has a semiconductor layer sequence 2 with an active layer 3 provided for emitting electromagnetic radiation 13 .

[0030] The active layer 3 of the light-emitting diode chip 1 can be designed, for example, as a pn junction, as a double heterostructure, as a single quantum well structure or as a multiple quantum well structure. The term "quantum well structure" here includes such structures in which charge carriers undergo quantization of their energy states by confinement. In particular, the term "quantum well structure" does not contain a statement about the quantized dimensions. It therefore includes in particular quantum tubes, quantum wires and quantum dots and every combination of these structures.

[0031] The semiconductor layer sequence 2 can be based in particular on nitride semiconductors. "Based on nitride semiconductors" in this context means that the semiconductor layer sequence 2 or at least one la...

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PUM

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Abstract

The invention relates to a light-emitting diode chip, comprising a semiconductor layer sequence, which has an active layer suitable for producing electromagnetic radiation, wherein the light-emitting diode chip has a radiation outlet surface on a front side. The light-emitting diode chip has a reflective film layer at least in some areas on a rear side opposite the radiation outlet surface. The reflective film layer contains silver. A protective layer having a transparent conductive oxide is arranged on the reflective film layer. The reflective film layer adjoins the sequence of semiconductor layers at an interface opposite to the protective layer; a first electrical connection layer is disposed on a side of the protective layer opposite to the reflective film layer; and the electrical connection layer is formed from a plurality of sub-layers, and the sub-layers comprise a platinum layer, a gold layer and a titanium layer starting from the reflective film layer.

Description

[0001] This application is a divisional application of the application with the same name with the application number 201280042389.5 and the application date on August 23, 2012. technical field [0002] The invention relates to a light emitting diode chip. [0003] This patent application claims priority from German patent application 10 2011 112 000.2, the disclosure content of which is hereby incorporated by reference. Background technique [0004] A light-emitting diode chip is known from document WO 2008 / 131735 A1, in which a first and a second electrical connection layer are arranged on the rear side of the light-emitting diode chip opposite one of the radiation exit faces and are electrically insulated from one another by means of a separating layer, wherein A partial area of ​​the second electrical connection layer extends from the back side through the through hole in the active layer to the front side of the light emitting diode chip. Such a contacting of the light...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38H01L33/40H01L33/42H01L33/56H01L33/60H01L33/62
CPCH01L33/405H01L33/42H01L33/382H01L33/56H01L33/60H01L33/62H01L2924/0002H01L2924/00
Inventor K.佩尔茨尔迈尔K.格尔克R.瓦尔特K.恩格尔G.魏斯M.毛特S.拉梅尔斯贝格尔
Owner OSRAM OPTO SEMICON GMBH & CO OHG