Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Morphic storage device

A technology of memory, memory blocks, applied in the field of systems that operate to adapt to various situations, and can solve problems such as degraded performance

Active Publication Date: 2017-12-29
SAMSUNG ELECTRONICS CO LTD
View PDF11 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For applications requiring only short retention times, it may not be advantageous to operate flash memory in a manner that provides longer retention times, resulting in, for example, reduced performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Morphic storage device
  • Morphic storage device
  • Morphic storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] The detailed description set forth below in conjunction with the accompanying drawings is intended as a description of example embodiments of morphic storage devices provided in accordance with the invention and is not intended to represent the only forms in which the invention may be constructed or utilized. This description sets forth the features of the invention in conjunction with the illustrated embodiments. However, it will be understood that the same or equivalent functions and structures can be realized by other embodiments which are intended to be included within the spirit and scope of the present invention. As indicated elsewhere herein, like element numbers are intended to refer to like elements or features.

[0044] Flash memory devices, such as solid-state drives, are persistent memory devices that have characteristics that differ in some respects from other persistent memory devices, such as hard disk drives. In flash memory, the charge on the floating ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A solid state drive with a capability to select physical flash memory blocks and erasure and programming methods according to requirements of an application using storage in the solid state drive. A wear-out tracker in the solid state drive counts programming and erase cycles, and a raw bit error rate tracker in the solid state drive monitors raw bit errors in data read from the solid state drive. The application provides, to the solid state drive, requirements on an allowable retention time, corresponding to the anticipated storage time of data stored by the application, and on an average response time corresponding to programming and read times for the flash memory. The solid state drive identifies physical flash memory blocks suitable for meeting the requirements, and allocates storage space to the application from among the identified physical flash memory blocks.

Description

technical field [0001] One or more aspects of embodiments in accordance with the present invention relate to flash memory, and more particularly, to systems and methods for adapting the operation of a flash memory device to various situations. Background technique [0002] Flash memory is a form of persistent storage in which the retention time of data can depend on various factors. For example, the retention time of data in a flash memory cell may depend on the number of program and erase cycles the cell has undergone, the erasing method used, and the programming method used. Various applications using flash memory may have different requirements, for example, some applications require very long retention times, while other applications only require shorter retention times. For applications requiring only short retention times, it may not be advantageous to operate flash memory in a manner that provides longer retention times, resulting in, for example, reduced performance...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F3/06
CPCG06F3/061G06F3/0616G06F3/0631G06F3/0638G06F3/0652G06F3/0679G06F3/0611G06F3/064G06F11/1068G06F3/0619G11C16/349G06F3/0649G06F3/0659G06F3/0688G06F11/1044G06F11/073G06F11/076G06F11/0772G06F11/079G11C16/14G11C29/04
Inventor I.S.崔奇亮奭
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products