Baking device and baking method for cylindrical sputtering target material
A technology of sputtering target material and roasting device, which is applied in sputtering coating, metal material coating process, ion implantation coating and other directions, can solve the problems of uneven flow path of oxygen-containing gas and uneven temperature distribution, etc. The effect of stable roasting quality, sufficient heat resistance and long service life
Active Publication Date: 2018-01-19
株式会社广筑
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Problems solved by technology
[0013] Regarding the aforementioned prior art, in a rectangular electric furnace with a cylindrical sputtering target molded body having a size of 15 cm diameter × 20 cm length to 20 cm diameter × 30 cm length as the baking object, an atmospheric gas such as oxygen is used from the bottom to the top of the furnace. In the case of circulation, it solves the problem that the flow path of oxygen-containing gas becomes uneven in the height direction in the furnace and / or on the inside and outside of the molded body, and then the temperature distribution in the furnace becomes uneven; by properly setting The position and number of pipes for supplying atmospheric gas are fixed, so that in the height direction of the cylindrical molded body, and between the outer and inner sides, uniform flow paths of atmospheric gas are made respectively, and the temperature distribution in the furnace is made uniform and uniform. sintering, as a result, a cylindrical oxide sintered body with high uniformity can be obtained
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[0040] use figure 1 , 2 , 3, and 4 will describe the firing apparatus 1 (hereinafter referred to as firing apparatus 1 ) of a cylindrical sputtering target according to the present invention.
[0041] The cylindrical sputtering target M used in the firing apparatus and firing method of the cylindrical sputtering target of the present invention is a long cylindrical sputtering target with a diameter of 150 to 300 mm, a layer thickness of about 10 mm, and a length of 1.5 to 2 m. material. The material is ITO (tin oxide-indium oxide) material, AZO (aluminum oxide-zinc oxide) material or IGZO (indium oxide-gallium oxide-zinc oxide) material. Regarding the firing, in the case of ITO materials, at a high temperature of 1450 to 1700°C, preferably at a high temperature of 1500 to 1600°C, and in the case of AZO or IGZO materials, at a high temperature of 1250 to 1500°C, It is preferably carried out at a high temperature of 1300-1450°C in an oxygen atmosphere for 3-30 hours, preferab...
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Abstract
The present invention addresses the problem of providing a baking device for manufacturing an elongated cylindrical sputtering target which is used to manufacture, via sputtering, a transparent conductive film used in a liquid crystal display device, a solar cell, and the like. [Solution] The present invention is characterized by being provided with: a fixed hearth where a member to be baked of the elongated cylindrical sputtering target material is placed upright; a baking furnace body centered around the fixed hearth and having on furnace walls a plurality of heaters and an oxygen inflow port; and a mechanism whereby the baking furnace body is placed on a traveling truck and can travel by rail between a baking position and a standby position, the mechanism further opening and closing a furnace seal between the bottom of the baking furnace and the fixed hearth.
Description
technical field [0001] The present invention relates to a firing device for a cylindrical sputtering target, in particular to a firing device for an oxide to-be-baked body, which is used in the production of liquid crystal display elements and / or solar cells, etc. by sputtering A long cylindrical sputtering target used in the case of a transparent conductive film. Background technique [0002] Transparent conductive films have high conductivity and high transmittance in the visible light region, and thus are used in electrodes of various light-receiving elements such as liquid crystal display elements and solar cells. As transparent conductive films, tin oxide-indium oxide films (ITO films), aluminum oxide-zinc oxide films (AZO films), and indium oxide-gallium oxide films are widely used because they can obtain high transmittance and low resistance films. - Zinc oxide film (IGZO film). [0003] As a method for producing a transparent conductive film formed of such an oxide...
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IPC IPC(8): C23C14/34
CPCC23C14/34C04B35/457C04B35/64C23C14/3407C23C14/3414F27B1/005F27B1/12F27B1/20F27D3/12
Inventor 久保田善明森冈稔裕
Owner 株式会社广筑