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Plasma ignition method and equipment

A plasma and equipment technology, applied in the field of plasma vapor deposition, can solve the problems of long time required for stabilization, low plasma success rate and efficiency, waste, etc., so as to improve the ignition success rate, shorten the process time, The effect of improving machine efficiency

Active Publication Date: 2019-07-05
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Claims
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Problems solved by technology

In this case, sometimes the process gas cannot be successfully ignited, or it takes a long time for the shock to stabilize during the plasma generation process, resulting in low success rate and efficiency of gas excitation into plasma
The inventors have found that these problems are mainly caused by the insufficient energy supply provided by the RF power supply during the beginning of the PECVD process. necessary waste

Method used

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  • Plasma ignition method and equipment
  • Plasma ignition method and equipment
  • Plasma ignition method and equipment

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Embodiment Construction

[0026] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0027] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses.

[0028] Techniques, methods, and starters known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods, and starters should be considered part of the description.

[0029] In all examples shown and discussed herein, any specific values ​​should be construed as exemplary only, and not as limitations. Therefore, other instances of the exemplary embodiment may have...

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Abstract

The present invention discloses a plasma ignition method and plasma ignition equipment. The plasma ignition method is used for exciting a gas into a plasma, and comprises: calculating an upper electrode ignition power RF for exciting a gas to generate a plasma, wherein RF is RF1+RF1*RF2 / (RF1+RF2), and RF1 and RF2 respectively are a steady upper electrode power and a steady lower electrode power for maintaining the gas at a plasma stable state; starting a first radio frequency power source connected to an upper electrode and a second radio frequency power source connected to a lower electrode,setting the power of the first radio frequency power source as RF, and setting the power of the second radio frequency power source as RF2; and detecting the reflection power corresponding to the first radio frequency power source with the set power RF, and setting the power of the first radio frequency power source as RF1 and setting the power of the second radio frequency power source as RF2 ifthe reflection power is less than RF1*5%. According to the present invention, with the method and the equipment, the success rate of the gas ignition can be improved, and the plasma stabilization timecan be reduced so as to shorten the processing time and improve the machine efficiency.

Description

technical field [0001] The invention relates to the technical field of plasma vapor deposition, and more specifically, to a plasma ignition method and plasma ignition equipment. Background technique [0002] In the PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) process, microwave or radio frequency is used to ionize the process gas containing the constituent atoms of the film to form plasma. With the strong chemical activity of plasma, it is easy to react , the desired film can be deposited on the substrate. [0003] In the prior art, when performing the PECVD process, the first RF power connected to the upper electrode and the second RF power connected to the lower electrode are often directly set as the target power, that is, the power of the first RF power is directly set to Determined as the upper electrode power RF required to maintain the process gas in a stable state of the plasma 1 , set the power of the second RF power...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/513C23C16/52
Inventor 张京华
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD