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A piezoresistive mems acceleration chip and manufacturing method thereof
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An acceleration and piezoresistive technology, which is applied in the direction of acceleration measurement using inertial force, can solve the problems that the lateral sensitivity ratio cannot meet the application requirements, and the lateral output of the accelerometer is large, so as to avoid torsion and reduce the lateral output.
Inactive Publication Date: 2020-03-17
NO 49 INST CHINESE ELECTRONICS SCI & TECH GRP +1
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[0004] The purpose of the present invention is to solve the problem that the lateral output of the accelerometer is large and the lateral sensitivity ratio cannot meet the application requirements, thereby providing a piezoresistive MEMS acceleration chip and its manufacturing method
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specific Embodiment approach 1
[0041] Specific implementation mode 1: This implementation mode will be described in detail with reference to the accompanying drawings.
[0042] The present invention provides an acceleration chip with a double-sided fixed support structure, that is, the mass block is suspended on the fixed support frame through elastic beams connected to its upper surface and lower surface, such as Figure 4 shown. The working conditions of the double-sided fixed-supported structure are the same as those of the single-sided fixed-supported structure, such as Figure 5 shown.
[0043] Under the excitation of lateral acceleration, the moment of the mass block is balanced, and it moves in translation along the direction of acceleration without twisting. The elastic beam at one end of the mass is stretched and the other end is compressed. Due to the symmetrical structure, the tensile deformation and compressive deformation are equal in size, causing the resistance of the force-sensitive resis...
specific Embodiment approach 2
[0053] Specific embodiment two: the manufacturing method of a kind of piezoresistive MEMS acceleration chip described in the present embodiment, this method comprises:
[0054] Select N-type 100 monocrystalline silicon wafers with a resistivity of 2-6Ω·cm, clean and thermally oxidize the silicon wafers, and the oxidation thickness is 200nm; Figure 9 for silicon wafers, Figure 10 A silicon wafer after thermal oxidation;
[0055] The doping of the force sensitive resistor is completed by photolithography, RIE (reactive ion etching) and ion implantation; Figure 11 A chip doped for force sensitive resistors;
[0056] Use photolithography and etching to remove the oxide layer of the connection hole of the force sensitive resistor; Figure 12 shown;
[0057] Use magnetron sputtering or thermal evaporation to cover the metal layer on the force sensitive resistor;
[0058] Use photolithography, etching and alloying processes to pattern the metal layer into leads and electrodes, ...
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Abstract
The invention provides a piezoresistive MEMS acceleration chip and a manufacturing method thereof, relates to the field of acceleration sensors, and aims at solving the problems that the transverse output of the accelerometer is large and the transverse sensitivity ratio cannot meet the application requirements. A mass block is fixed at the center of a fixed support frame through connection of multiple sensitive beams and multiple support beams. Multiple sensitive beams are symmetrically distributed between the mass block and the fixed support frame, and the upper surface of the sensitive beams, the upper surface of the mass block and the upper surface of the fixed support frame are arranged on the same plane. Multiple support beams are symmetrically distributed between the mass block andthe fixed support frame, and the lower surface of the support beams, the lower surface of the mass block and the lower surface of the fixed support frame are arranged on the same plane. Cleaning and thermal oxidation are performed on the silicon wafer; doping of force sensitive resistor is performed; the oxide layer of connecting holes is removed; the metal layer is covered; the Wheatstone bridgeis connected; the sensitive beams are thinned to the target depth; and the support beams are thinned to the target depth. The piezoresistive MEMS acceleration chip is suitable for acceleration measurement.
Description
technical field [0001] The invention relates to the field of acceleration sensors. Background technique [0002] MEMS silicon piezoresistive accelerometers have good performance, low process difficulty, and easy integration. They are currently the most widely used accelerometers. The structure of the existing MEMS silicon piezoresistive accelerator chip is as follows: figure 1 As shown, the mass block is suspended on the fixed support frame through elastic beams. The fixed support frame remains static, and the relative movement of the mass block under the action of the acceleration a is related to the magnitude of the acceleration, causing the deformation of the elastic beam, such as figure 2 , the resistance value of the force-sensitive resistor on the elastic beam changes with the occurrence of deformation, and the measurement of the acceleration can be realized by measuring the resistance value of the force-sensitive resistor. [0003] In the existing piezoresistive b...
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Patent Type & Authority Patents(China)
IPC IPC(8): G01P15/12G01P15/08
Inventor 刘智辉李玉玲王明伟宋尔冬田雷程鑫吴佐飞吴紫峰谌福华程颖
Owner NO 49 INST CHINESE ELECTRONICS SCI & TECH GRP
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