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Multi-Patterning to Form Vias with Straight Profiles

A patterned and organic layer technology, applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve problems such as component short circuits

Active Publication Date: 2018-02-06
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When two separated components are too close to each other, the optical proximity effect can cause the resulting components to short each other

Method used

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  • Multi-Patterning to Form Vias with Straight Profiles
  • Multi-Patterning to Form Vias with Straight Profiles
  • Multi-Patterning to Form Vias with Straight Profiles

Examples

Experimental program
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Embodiment Construction

[0011] It should be understood that the following summary provides many different embodiments, or examples, for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include embodiments in which the first component and the second component may be formed in direct contact. An embodiment in which an additional part is formed so that the first part and the second part may not be in direct contact. In addition, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for the sake of simplicity and clarity and does not in...

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Abstract

A method includes forming a carbon-containing layer with a carbon atomic percentage greater than about 25 percent over a first hard mask layer, forming a capping layer over the carbon-containing layer, forming a first photo resist over the capping layer, and etching the capping layer and the carbon-containing layer using the first photo resist as a first etching mask. The first photo resist is then removed. A second photo resist is formed over the capping layer. The capping layer and the carbon-containing layer are etched using the second photo resist as a second etching mask. The second photoresist is removed. A third photo resist under the carbon-containing layer is etched using the carbon-containing layer as etching mask. A dielectric layer underlying the third photo resist is etched to form via openings using the third photo resist as etching mask. The via openings are filled with a conductive material.

Description

technical field [0001] Embodiments of the invention relate to multiple patterning for forming vias with straight profiles. Background technique [0002] To form integrated circuits on a wafer, photolithography is used. A typical photolithography process includes applying a photoresist and defining a pattern on the photoresist. The pattern in the patterned photoresist is defined in the photolithographic mask, or the transparent or opaque portions of the photolithographic mask define the pattern in the patterned photoresist. The pattern in the patterned photoresist is then transferred to the underlying component by an etching step, where the patterned photoresist is used as an etch mask. After the etching step, the patterned photoresist is removed. [0003] With increasing scaling of integrated circuits, the optical proximity effect poses an increasing problem for transferring patterns from photolithographic masks to wafers. When two separate components are too close to ea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/76802H01L21/76877H01L2221/101H01L21/31144H01L21/76811H01L21/76813H01L21/76816H01L21/7681H01L21/76829
Inventor 陈濬凯许仲豪周家政柯忠祁李资良陈志壕潘兴强
Owner TAIWAN SEMICON MFG CO LTD