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high frequency line

A high-frequency, line technology, applied in the field of high-frequency lines, to achieve the effect of suppressing impedance changes

Active Publication Date: 2021-02-09
NIPPON TELEGRAPH & TELEPHONE CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the high-frequency wiring 103 connected to the modulation electrode 102 inevitably crosses the optical waveguide 101 that transmits the optical signal.

Method used

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no. 1 approach

[0054] exist Figure 4A The top view of the segmented unit of the high-frequency line according to the first embodiment of the present invention is shown in Figure 4B Its IVB-IVB sectional view is shown in the Figure 4C Its IVC-IVC transverse section view is shown in Figure 4D Its IVD-IVD transverse cross-sectional view is shown in . The high-frequency line of this embodiment is a microstrip line, and its basic structure is formed by sequentially stacking a ground electrode 302 , a dielectric layer 304 , and a signal electrode 305 on a SI-InP substrate 301 . In addition, as shown in the transverse sectional view, the optical waveguide core 303 of the InP-based semiconductor intersects in the form of crossing the high-frequency line.

[0055] Such as Figure 4B sectional view of Figure 4D As shown in the cross-sectional view of the optical waveguide, the ground electrode 302 of the high-frequency line is partially interrupted along the transmission direction, and part ...

no. 2 approach

[0062] exist Figure 7A The top view of the segmented unit of the high-frequency line according to the second embodiment of the present invention is shown in Figure 7B Its VIIB-VIIB sectional view is shown in the Figure 7C Its VIIC-VIIC transverse sectional view is shown in the Figure 7D Shown in its VIID-VIID transverse cross-sectional view. The high-frequency line in this embodiment is a grounded coplanar line, and its basic structure is formed by sequentially stacking a lower ground electrode 702 , a dielectric layer 704 , a signal electrode 705 and an upper ground electrode 706 on a SI-InP substrate 701 . In addition, as shown in the cross-sectional view, the optical waveguide core 703 of the InP-based semiconductor intersects the high-frequency line.

[0063] As described in the first embodiment, due to the existence of this optical waveguide intersection, the dielectric constant between the lower layer ground electrode 702 and the signal electrode 705 is locally ch...

no. 3 approach

[0071] In addition, in Figure 9A A top view with grounded coplanar lines of a third embodiment of the present invention is shown in Figure 9B Its IXB-IXB sectional view is shown in the Figure 9C Its IXC-IXC transverse section view is shown in the Figure 9D Shown in its LCD-LCD transverse cross-sectional view. Such as Figure 9A As shown, the width of the signal electrode 905 is the same, but the width of the upper ground electrode 906 in the intersecting region of the optical waveguides may be enlarged, and the distance between the signal electrode 905 and the upper ground electrode 906 may be changed, specifically narrowed. In the case of this compensation structure (narrow SG gap electrode), such as Figure 8B As shown, the effect of suppressing the increase in characteristic impedance and the effect of suppressing the increase in excess electrical loss were also confirmed.

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Abstract

The present invention provides a high-frequency line having a structure that suppresses the occurrence of impedance change and electrical excess loss in a high-frequency line intersecting with an optical waveguide. The high-frequency line is a microstrip line, and its basic structure is formed by stacking a ground electrode, a dielectric layer, and a signal electrode in sequence on the SI‑InP substrate. In addition, as shown in the transverse cross-sectional view, the optical waveguide cores of the InP-based semiconductor intersect with each other in the form of crossing the high-frequency line. Along the transmission direction of the high-frequency line, the width of the signal electrode is locally enlarged in a certain region including the intersection of the optical waveguides. In a microstrip line, the width of the signal electrode varies locally from w 1 expand to w 2 , compared to w with uniform width 1 , which reduces the characteristic impedance.

Description

technical field [0001] The present invention relates to a high-frequency circuit for applying electric signals to modulation electrodes of optical modulators and the like. Background technique [0002] With the explosive increase in data communication volume in recent years, the increase in capacity of optical communication systems is required, and the integration and complexity of optical components used and the increase in speed of signals are being promoted. Among these optical components, for example, a light modulator can be cited. Recently, in order to increase the transmission capacity, an optical I / Q modulator based on a Mach-Zehnder (MZ: Mach-Zehnder) modulator (for example, refer to Non-Patent Document 1) is gradually being applied to two kinds of polarized light Two polarization-multiplexed optical I / Q modulators are integrated (a total of four Mach-Zehnder modulators are integrated), and the Mach-Zehnder modulator is integrated with QPSK (Quadrature Phase Shift ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P3/08G02F1/025H01P3/00
CPCG02F1/025H01P5/087H01P5/022H01P3/003H01P3/081
Inventor 菊池顺裕山田英一小木曾义弘尾崎常祐
Owner NIPPON TELEGRAPH & TELEPHONE CORP
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