EEPROM model circuit, modeling method, simulation method and test structure

Abstract

The invention discloses an EEPROM model circuit, a modeling method, a simulation method and a test structure. The EEPROM model circuit comprises a capacitor, an MOS tube and a current source, whereinthe capacitor is a coupling capacitor formed by a floating grid and a control grid, and has a floating grid node and a control grid node opposite to the floating grid node; the MOS tube is formed by asource electrode, a drain electrode and a grid electrode, and has a source electrode node, a drain electrode node and a grid electrode node; the grid node is connected with the floating grid node; current between the source electrode node and the drain electrode node is source-drain current; voltage between the floating grid node and the source electrode node is floating-source dropout voltage; the current source has a first node and a second node opposite to the first node; the first node is connected with the source electrode node; the second node is connected with the floating grid node; and current magnitude of the current source is related to the source-drain current and the floating-source dropout voltage. According to the EEPROM circuit model, a simulation function which can be provided by the EEPROM model circuit is more complete.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an EEPROM model circuit, a modeling method, a simulation method and a test structure. Background technique [0002] Integrated circuit technology has developed rapidly since the 1940s, greatly improving people's lives. Moore's Law states that with the advancement of technology, the number of transistors that can be integrated on a monolithic integrated circuit increases four times approximately every three years. [0003] Memory is an important branch of integrated circuits and the core unit of all electronic systems. There are two types of semiconductor memory, volatile memory and non-volatile memory. The difference between the two types is that the data in the volatile memory is lost after the power supply voltage is removed, while the data in the non-volatile memory can still be maintained. There are many types of non-volatile storage areas, such as ultraviolet erasab...

AI Technical Summary

Problems solved by technology

[0004] In the prior art, when simulating a storage module with EEPROM as the storage core, the simulation function is limited

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