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Material with threshold resistance transition function at low temperature and preparation method thereof

A technology of resistance conversion and threshold value, applied in the direction of electrical components, etc., can solve problems such as charge leakage, reliability reduction, and increased manufacturing cost

Active Publication Date: 2018-03-02
ZHEJIANG NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The main problems currently existing in volatile memory are: as the feature size continues to shrink, there is a risk of charge leakage, resulting in a decrease in reliability; Materials, such as nickel oxide, tantalum oxide, aluminum nitride, and manganese oxide, need to purchase corresponding targets when using traditional CMOS integrated circuit technology, which increases the manufacturing cost

Method used

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  • Material with threshold resistance transition function at low temperature and preparation method thereof
  • Material with threshold resistance transition function at low temperature and preparation method thereof
  • Material with threshold resistance transition function at low temperature and preparation method thereof

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Embodiment Construction

[0020] See attached picture. The material described in this embodiment has a multi-layer stacked three-dimensional structure, which includes an aluminum back electrode layer 1 , a p-type heavily doped silicon layer 2 , a silicon nitride layer 3 , and a metal upper electrode layer 4 from bottom to top. The metal upper electrode layer 4 is a silver electrode, and can also be made of metal materials such as aluminum, copper, gold, platinum, etc. The shape is circular and the diameter is less than 500 μm.

[0021] Such as figure 2 As shown, the preparation method of the material described in this embodiment comprises the following steps:

[0022] 1) Select a p-type heavily doped silicon wafer 2 with a resistivity lower than 0.001Ω∙cm and a thickness less than 750µm, and perform standard RCA cleaning;

[0023] 2) On the front side of the cleaned silicon wafer, use physical vapor deposition or chemical vapor deposition to deposit silicon nitride layer 3 with a thickness of 10-100...

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Abstract

The invention discloses a material with a threshold resistance transition function at low temperature and a preparation method thereof. The material has a multi-layer stacked 3D structure which is composed of an aluminum back electrode layer, a p-type heavily doped silicon wafer layer, a silicon nitride layer and a metal upper electrode layer from bottom to top. The material is a silicon-based material, and is compatible with the traditional CMOS integrated circuit technology. The SiN material is assembled into a device Ag / SiN / p-Si / Al. The device Ag / SiN / p-Si / Al has typical threshold resistancetransition characteristic at the temperature of 210K.

Description

technical field [0001] The invention belongs to the technical field of ultra-large-scale integrated circuits, and in particular relates to a material with threshold resistance transition function at low temperature and a preparation method thereof. Background technique [0002] The resistance transition effect can be divided into two types: memory resistance transition and threshold resistance transition. In the memristor transition effect, both the high-resistance state and the low-resistance state of the device can maintain a stable state under zero bias, so this effect can be applied to non-volatile memory devices. However, for the threshold resistance transition effect at low temperature, only the high-resistance state is stable under zero bias, which can only be applied to volatile memories (such as dynamic random access memory). In this field, low temperature generally refers to the temperature from room temperature to liquid nitrogen, usually in the range of 300K-77K...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/046
Inventor 黄仕华陈达
Owner ZHEJIANG NORMAL UNIVERSITY