source of ion
A technology of ion source and plasma, which is applied in the field of ion source, can solve the problems of difficult support matrix maintenance, etc., and achieve the effect of shortening the time
Active Publication Date: 2019-07-16
NISSIN ION EQUIP CO LTD
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Problems solved by technology
[0005] However, it is difficult to keep the support base at a desired position in the case where a stopper is used to limit the movement of the support base after being manually moved.
Method used
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Embodiment Construction
[0050] One embodiment of the present invention will be described.
[0051] The ion source IS of this embodiment is used, for example, in an ion beam irradiation device for manufacturing P-type and N-type semiconductor elements, specifically, as figure 1 As shown, a plasma generation chamber 6 that generates plasma inside, a plurality of cathodes 1 inserted into the plasma generation chamber 6 , a support base 20 for supporting the cathodes 1 , and a The telescopic member 4 between the wall surface 61 and the support base 20 and the drive mechanism 30 for moving the support base 20 .
[0052] The plasma generation chamber 6 is a rectangular parallelepiped, cubic or cylindrical room, and has an opening formed on one side thereof. An insulating flange 8 is attached to the opening, and a plurality of electrodes called an extraction electrode system 9 for extracting ion beams from the plasma generation chamber 6 are supported on the insulating flange 8 in a state of being electric...
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The present invention provides an ion source that does not require a stop or control for holding the support substrate in a desired position to simply maintain the support substrate in a desired position. An ion source having a permanent magnet disposed around the plasma generating chamber includes a cathode, which is inserted into the plasma generating chamber and emits electrons into the plasmagenerating chamber; a support substrate body which is disposed outside the plasma generating chamber to support the cathode; a drive mechanism which moves the support substrate in a direction away from the outer wall surface of the plasma generating chamber; and a telescopic member which is interposed between the support base and the outer wall surface of the plasma generating chamber and covers the periphery of the through-hole, and the space between the support base and the outer wall surface of the plasma generating chamber is kept airtight; the support substrate body in the backward position, whose driving force is pulled away from the outer wall of the plasma generating chamber, is held in the forward position by drawing closer to the outer wall of the plasma generating chamber in comparison with the backward position.
Description
technical field [0001] The present invention relates to an ion source used in an ion beam irradiation device. Background technique [0002] As such an ion source, as shown in Patent Document 1, in a so-called barrel-type ion source in which permanent magnets are arranged around the plasma generation chamber, a cathode that emits electrons is inserted through a through hole formed in the wall surface of the plasma generation chamber. into the plasma generation chamber. [0003] In order to adjust the cathode arrangement in the plasma generation chamber in this ion source, a stretchable bellows is provided between the support base and the plasma generation chamber to make the distance between the support base and the plasma generation chamber variable. As a method of adjusting the cathode arrangement, a method of manually moving the support base and a method of mechanically moving the support base using a motor are mentioned. [0004] In Patent Document 1, there is a concern...
Claims
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IPC IPC(8): H01J27/14
CPCH01J27/14
Inventor 甲斐裕章西村一平
Owner NISSIN ION EQUIP CO LTD