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Photoresist, preparation method and photolithography process thereof

A photolithography process and photoresist technology, applied in the field of photolithography, can solve the problems of human body hazards and high toxicity, and achieve the effects of easy operation, improved adhesion and good adhesion performance.

Active Publication Date: 2021-04-30
SUNTIFIC MATERIALS WEIFANG LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because HMDS is highly toxic and harmful to the human body, many manufacturers try to avoid using it

Method used

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  • Photoresist, preparation method and photolithography process thereof
  • Photoresist, preparation method and photolithography process thereof
  • Photoresist, preparation method and photolithography process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The composition of the photoresist of the present embodiment is:

[0048] 19.68g of large molecular weight resin, 4.92g of small molecular weight resin, 5.4g of 2,1,4-diazonaphthoquinone sulfonate, 1.5g of United Carbide A-1100, 68.5g of propylene glycol methyl ether acetate.

[0049] Wherein, the high molecular weight resin has a structural unit The resin, wherein, the number of repeating units is 85; the low molecular weight resin has a general structural formula Wherein, the number of repeating units is 16.

[0050] The specific steps of the preparation method of the photoresist are as follows: the above-mentioned components are mixed, fully dissolved, and then filtered through a filter membrane with a pore size of 0.02 μm to obtain the photoresist.

[0051] The specific steps of the photolithography process of the photoresist are as follows: spin-coat the above-mentioned photoresist on the treated silicon wafer, pre-bake it with a hot plate, and pre-bake it at 1...

Embodiment 2

[0053] The composition of the photoresist of the present embodiment is:

[0054] 18.72g of large molecular weight resin, 4.68g of small molecular weight resin, 6.6g of 2,1,5-diazonaphthoquinone sulfonate, 1g of Chinese Academy of Sciences KH-550, 69g of propylene glycol methyl ether acetate.

[0055] Wherein, the high molecular weight resin has a structural unit The resin, wherein, the number of repeating units is 50; the small molecular weight resin has a general structural formula Wherein, the number of repeating units is 9.

[0056] The specific steps of the preparation method of the photoresist are as follows: the above-mentioned components are mixed, fully dissolved, and then filtered through a filter membrane with a pore size of 0.02 μm to obtain the photoresist.

[0057] The specific steps of the photolithography process of the photoresist are as follows: spin-coat the above-mentioned photoresist on the treated silicon wafer, pre-bake it with a hot plate, and pre-ba...

Embodiment 3

[0059] The composition of the photoresist of the present embodiment is:

[0060] 17.01g of large molecular weight resin, 7.29g of small molecular weight resin, 5.7g of 2,1,4-diazonaphthoquinone sulfonate, 1.5g of Dow Corning Z-6011, and 68.5g of propylene glycol methyl ether acetate.

[0061] Wherein, the high molecular weight resin has a structural unit The resin, wherein, the number of repeating units is 85; the low molecular weight resin has a general structural formula Wherein, the number of repeating units is 9.

[0062] The specific steps of the preparation method of the photoresist are as follows: the above-mentioned components are mixed, fully dissolved, and then filtered through a filter membrane with a pore size of 0.02 μm to obtain the photoresist.

[0063] The specific steps of the photolithography process of the photoresist are as follows: spin-coat the above-mentioned photoresist on the treated silicon wafer, pre-bake it with a hot plate, and pre-bake it at 1...

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Abstract

The invention relates to the technical field of photolithography, in particular to a photoresist, a preparation method and a photolithography process thereof. The photoresist is mainly made of large molecular weight resin, small molecular weight resin, photosensitizer and solvent; the photoresist is mainly made of the following components by mass percentage: high molecular weight resin 15-25%, small molecular weight resin Resin 2‑16%, photosensitizer 3‑15%, and solvent 50‑80%. The molecular weight of the small molecular weight resin is relatively low, the chain structure of the molecule is relatively short, the occupied volume is relatively small, and the steric hindrance is relatively small, so it can be filled between the gaps formed by the large molecular weight resin, and the small molecular weight resin and the large molecular weight resin Through the intermolecular force, the bonding force between the two is improved, the structural compactness of the photoresist after baking is further increased, the adhesion is improved, and glue bleaching is avoided.

Description

technical field [0001] The invention relates to the technical field of photolithography, in particular to a photoresist, a preparation method and a photolithography process thereof. Background technique [0002] Photoresist, also known as photoresist, is a photosensitive mixture composed of photosensitive resin, photosensitizer and solvent, which can undergo crosslinking, curing or degradation reactions under the irradiation of ultraviolet light beams. It has a wide range of applications in electronic fields such as integrated circuits, liquid crystal displays, solar photovoltaics, and micro-electromechanical systems. Photoresist compositions are used in photolithographic fabrication of microelectronic devices such as computer chips and integrated circuits. It generally needs to coat a layer of uniform photoresist on the surface of substrate materials such as silicon wafers, sapphire wafers, etc., then bake it to evaporate and remove the solvent in the glue, and then perfor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004G03F7/16G03F7/20
CPCG03F7/004G03F7/168G03F7/2004
Inventor 孙逊运谢桂兰孙敏吴淑财于凯宋建林
Owner SUNTIFIC MATERIALS WEIFANG LTD
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