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Integrated circuit comprising mos transistors and method of manufacturing same

A technology of MOS transistors and integrated circuits, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as the reduction of transistor threshold voltages

Inactive Publication Date: 2018-04-03
STMICROELECTRONICS (CROLLES 2) SAS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

can also be used with logic transistor NMOS L This analog transistor NMOS is formed in the same way A , which caused various problems, especially making NMOS A The threshold voltage of the transistor is reduced to the lowest possible value

Method used

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  • Integrated circuit comprising mos transistors and method of manufacturing same
  • Integrated circuit comprising mos transistors and method of manufacturing same
  • Integrated circuit comprising mos transistors and method of manufacturing same

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Embodiment Construction

[0021] Like parts are labeled with like reference numerals in the various drawings, and the various drawings are not drawn to scale. For clarity, only those steps and elements that are useful for understanding the described embodiments are shown and described in detail.

[0022] In the following description, the terms "rear", "left", "right", "upper", "lower", etc. refer to directions of elements considered in the corresponding drawings. Unless otherwise stated, the expression "of the order of ..." means within 10%, preferably within 5%.

[0023] figure 1 is a simplified cross-sectional view schematically illustrating an embodiment of an integrated circuit including FDSOI type MOS transistors. This integrated circuit includes at least one logic N-channel MOS transistor NMOS L , at least one logic P-channel OS transistor PMOS L and at least one analog N-channel transistor NMOS A . exist figure 1 The right, middle and left of the figure show the NMOS L Transistor, PMOS...

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Abstract

The present invention relates to an integrated circuit comprising MOS transistors and method for manufacturing the same. An integrated circuit including FDSOI-type MOS transistors comprises at least one first type of logic MOS transistor located at the internal portion and the top portion of a semiconductor layer on an insulation layer, at least one second type of logic MOS transistor and at leastone first type of analog MOS transistor. A gate stack of the logic transistors successively includes a gate insulator layer, a first titanium nitride layer, a lanthanum layer and a second titanium nitride layer. A gate stack of the analog transistor includes the gate insulator layer, the lanthanum layer and the second titanium nitride layer but not the first titanium nitride layer.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from French Patent Application No. 16 / 59090, filed September 27, 2016, the contents of which are hereby incorporated by reference in their entirety to the fullest extent permitted by law. technical field [0003] The present disclosure relates to an integrated circuit comprising MOS transistors and to a method of manufacturing such an integrated circuit. Consider here more specifically the case where the MOS transistor is of the FDSOI ("fully depleted semiconductor on insulator") type. Such transistors are formed in a semiconductor layer on an insulator and have a thickness of less than 20 nm or even less than 10 nm. Background technique [0004] In integrated circuits, the term "logic MOS transistor" is used to denote a transistor used to implement logic functions, and the term "analog MOS transistor" is used to denote a transistor used to implement analog functions. [0005] Logic ...

Claims

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Application Information

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IPC IPC(8): H01L27/07H01L27/06H01L21/8232
CPCH01L21/8232H01L27/06H01L27/0705H01L29/42372H01L29/42384H01L29/66772H01L21/82345H01L29/7833H01L21/823842H01L21/84H01L27/092H01L27/1203H01L29/4966H01L29/517H01L29/7838
Inventor G·C·里贝斯B·杜蒙特F·亚瑙德
Owner STMICROELECTRONICS (CROLLES 2) SAS