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Magnetic semiconductor material and preparation method thereof

A magnetic semiconductor and chemical formula technology, applied in the fields of magnetism of inorganic materials, manufacturing of inductors/transformers/magnets, electrical components, etc., can solve problems such as strong interaction, affecting one-dimensional performance, and affecting the application of anisotropic magnetoelectric devices, etc., to achieve The effect of obvious one-dimensional features and good application prospects

Active Publication Date: 2018-04-06
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But in general, BaVS 3 VS 6 Distance between chains and BaVSe 3 VSe 6 The distance between the chains is relatively short, which makes the interaction between the V chains relatively strong, which seriously affects the one-dimensional properties of the two materials, which in turn affects their regulation at the quantum critical point and the preparation of anisotropic magnetoelectric devices, etc. Aspects of application

Method used

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  • Magnetic semiconductor material and preparation method thereof
  • Magnetic semiconductor material and preparation method thereof
  • Magnetic semiconductor material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0031] This embodiment provides a magnetic semiconductor material Ba 9 V 3 Se 15 , which is prepared using the following steps:

[0032] Step 1: Simply mix metal Ba particles and Se powder in a high-purity argon atmosphere according to the stoichiometric ratio Ba:Se=1:1, and place them in a ceramic crucible;

[0033] Step 2: the ceramic crucible is placed in a high vacuum (Pa-3 ) in a quartz tube, sealed, heated to 700 ° C, and then kept for 20 hours to obtain BaSe powder;

[0034] Step 3: Mix the BaSe powder obtained in step 2, commercially available metal V powder and Se powder according to the molar ratio BaSe:V:Se=3:1:2, and press it into a tablet with a diameter of 6 mm and a height of 3 mm. Cylinders, in which the mixed material is pressed into cylinders to accommodate the corresponding shape of the apparatus in subsequent steps and to eliminate air gaps in the mixed material; and

[0035] Step 4: Put the cylinder obtained in Step 3 into a six-sided top press, increa...

Embodiment 2

[0040] This embodiment provides a magnetic semiconductor material Ba 9 V 3 Te 15 , which is prepared using the following steps:

[0041] Step 1: Simply mix metal Ba particles and Te powder in a high-purity argon atmosphere according to the stoichiometric ratio Ba:Te=1:1, and place them in a ceramic crucible;

[0042] Step 2: the ceramic crucible is placed in a high vacuum (Pa-3 ) in a quartz tube, sealed, heated to 700 ° C, and then kept for 20 hours to obtain BaTe powder;

[0043] Step 3: Mix the BaTe powder obtained in step 2, commercially available metal V powder and Te powder with the molar ratio BaTe:V:Te=3:1:2, and press it into a diameter of 6mm and a height of 3mm by a tablet press cylinders; and

[0044] Step 4: Put the cylinder obtained in Step 3 into a two-stage pusher press, increase the pressure at 1.5GPa / min to 5.5GPa, raise the temperature at 300°C / min to 1200°C, and keep warm for 60min. After the heat preservation is over, the temperature of the press is l...

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Abstract

The invention provides a magnetic semiconductor material. A chemical formula of the magnetic semiconductor material is M9V3X15, wherein M represents one or more of Ca, Sr and Ba, V represents a chemical element vanadium, and X represents one or more of sulfur group element S, Se and Te. The one-dimensional characteristics of the one-dimensional magnetic semiconductor material are obvious, and themagnetic semiconductor material has the very good application prospect on the aspects of scientific research and the preparation of anisotropic magnetoelectric devices.

Description

technical field [0001] The invention belongs to the field of magnetic materials, and in particular relates to a magnetic semiconductor material and a preparation method thereof. Background technique [0002] In condensed matter physics, strongly correlated electronic systems have always been a hot topic of research. Many novel physical phenomena, such as high-temperature superconductivity, anomalous Hall effect, topological insulator, etc. have been reported one after another. Among them, the research on 3d transition metal compounds of chalcogenides has attracted extensive attention because of the strong correlation of d orbital electrons. One-dimensional material BaVS 3 , whose crystals are mainly composed of VS 6 Chain composition, the lattice parameters are a=b=6.7240(0), c=5.6100(0), VS 6 The distance between the chains is the lattice constant a, and the researchers discovered the hexagonal crystal-orthorhombic crystal transition, the metal-insulator phase transitio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F1/40H01F41/00
CPCH01F1/40H01F41/00
Inventor 靳常青张俊望贤成
Owner INST OF PHYSICS - CHINESE ACAD OF SCI