Semiconductor device and method for forming semiconductor device
A semiconductor and device technology, applied in the field of semiconductor devices and used to form semiconductor devices, can solve problems such as long switching time and increased power consumption of semiconductor devices
Active Publication Date: 2021-10-08
INFINEON TECH DRESDEN
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
However, protection methods for semiconductor devices often cause other disadvantages, such as longer switching times of the semiconductor device, more process steps during the production of the semiconductor device, and / or increased power consumption of the semiconductor device
Method used
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[0023] Various examples will now be described more fully with reference to the accompanying drawings in which some examples are illustrated. In the drawings, the thickness of lines, layers, and / or regions may be exaggerated for clarity.
[0024] Therefore, while further examples are capable of various modifications and alternative forms, some specific examples thereof are shown in the drawings and will be described in detail later. However, this detailed description does not limit the additional examples to the specific forms described. Additional examples may cover all modifications, equivalents, and alternatives falling within the scope of the disclosure. Throughout the description of the figures, like numerals refer to like or similar elements, which may be implemented identically or in a modified form while providing the same or similar functionality when compared to each other.
[0025] It will be understood that when an element is referred to as being "connected" or "c...
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Abstract
The present invention discloses semiconductor devices and methods for forming semiconductor devices. Semiconductor devices include transistor arrangements and diode structures. A diode structure is coupled between the gate electrode structure of the transistor arrangement and the source electrode structure of the transistor arrangement. An insulating layer is positioned vertically between the diode structure of the semiconductor device and the front side surface of the semiconductor substrate. The diode structure includes at least one diode pn junction. A substrate pn junction extends from the front side surface of the semiconductor substrate into the semiconductor substrate between the shield doped region and the edge doped portion. An edge doped portion is positioned adjacent to the shield doped region within the semiconductor substrate. At the front side surface of the semiconductor substrate, a substrate pn junction is positioned laterally between the diode pn junction and the source contact region of the diode structure and the source electrode structure.
Description
technical field [0001] Embodiments relate to concepts for the integration of diodes in semiconductor devices, and in particular to semiconductor devices and methods for forming semiconductor devices. Background technique [0002] Semiconductor devices can be subjected to various influences that can cause damage to the semiconductor devices or even destroy them. For example, semiconductor devices may experience electrostatic discharge or locally excessive current densities, especially during switching or transient events. However, protection methods for semiconductor devices often cause other disadvantages, such as longer switching times of the semiconductor devices, more process steps during production of the semiconductor devices, and / or increased power consumption of the semiconductor devices. It is desirable to protect semiconductor devices from such deleterious effects without deteriorating other performance factors of the semiconductor device. Contents of the inventi...
Claims
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IPC IPC(8): H01L29/78H01L29/36H01L27/02H01L21/84H01L23/552
CPCH01L21/84H01L23/552H01L27/0255H01L29/7808H01L29/7811H01L29/0615H01L29/0638H01L29/0634H01L29/866H01L27/0727H01L29/0619H01L29/0692H01L29/0696H01L29/1079H01L29/1095H01L29/36H01L29/408H01L29/45H01L29/4966H01L29/66106H01L29/7821H01L29/7823
Inventor F.希尔勒A.马穆德Y.吕埃E.贝西诺巴斯克斯J.魏尔斯
Owner INFINEON TECH DRESDEN