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A kind of preparation method of solid-state fluorescent carbon quantum dots

A technology of carbon quantum dots and solid-state fluorescence, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of unfavorable transportation and preservation, difficult control of preparation process, etc.

Active Publication Date: 2019-12-03
CHINA THREE GORGES UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These methods generally include concentrated sulfuric acid hydrothermal synthesis method, microwave reaction carbonization method, plasma hydrothermal method, etc. Although the raw materials used in these synthesis methods are simple and easy to obtain, polydisperse carbon quantum dots can be prepared, but the preparation process is difficult to control. The synthesized carbon nanodots are often dispersed in the solution, which is not conducive to transportation and storage

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  • A kind of preparation method of solid-state fluorescent carbon quantum dots
  • A kind of preparation method of solid-state fluorescent carbon quantum dots

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Effect test

Embodiment 1

[0011] A kind of preparation method that is embedded with carbon quantum dot film material comprises the following steps:

[0012] (1) Clean and dry the substrate. First place the quartz sheet or monocrystalline silicon wafer in acetone for 10 minutes of ultrasonic cleaning, then use deionized water to ultrasonically rinse the quartz sheet or monocrystalline silicon wafer for 5 minutes, and then place it in absolute ethanol for 10 minutes of ultrasonic cleaning, and then Use deionized water to ultrasonically rinse the quartz wafer or single crystal silicon wafer for 5 minutes, and finally dry it with nitrogen;

[0013] (2) The reaction chamber is pre-evacuated to remove residual gas. Use mechanical pumps, Roots pumps, molecular pumps and other vacuum equipment to pre-evacuate the reaction chamber at 200 ° C until the pressure is lower than 10 -4 Pa;

[0014] (3) Preparation of thin films embedded with carbon quantum dots. Using methane as the reaction gas, plasma-enhanced...

Embodiment 2

[0018] A kind of preparation method that is embedded with carbon quantum dot film material comprises the following steps:

[0019] (1) Clean and dry the substrate. First place the quartz sheet or monocrystalline silicon wafer in acetone for 10 minutes of ultrasonic cleaning, then use deionized water to ultrasonically rinse the quartz sheet or monocrystalline silicon wafer for 5 minutes, and then place it in absolute ethanol for 10 minutes of ultrasonic cleaning, and then Use deionized water to ultrasonically rinse the quartz wafer or single crystal silicon wafer for 5 minutes, and finally dry it with nitrogen;

[0020] (2) The reaction chamber is pre-evacuated to remove residual gas. Use mechanical pumps, Roots pumps, molecular pumps and other vacuum equipment to pre-evacuate the reaction chamber at 220 ° C until the pressure is lower than 10 -4 Pa.

[0021] (3) Preparation of thin films embedded with carbon quantum dots. Using methane as the reaction gas, plasma-enhanced...

Embodiment 3

[0024] A kind of preparation method that is embedded with carbon quantum dot film material comprises the following steps:

[0025] (1) Clean and dry the substrate. First place the quartz sheet or monocrystalline silicon wafer in acetone for 10 minutes of ultrasonic cleaning, then use deionized water to ultrasonically rinse the quartz sheet or monocrystalline silicon wafer for 5 minutes, and then place it in absolute ethanol for 10 minutes of ultrasonic cleaning, and then Use deionized water to ultrasonically rinse the quartz wafer or single crystal silicon wafer for 5 minutes, and finally dry it with nitrogen;

[0026] (2) The reaction chamber is pre-evacuated to remove residual gas. Use mechanical pumps, Roots pumps, molecular pumps and other vacuum equipment to pre-evacuate the reaction chamber at 240 °C until the pressure is lower than 10-4 Pa.

[0027] (3) Preparation of thin films embedded with carbon quantum dots. Using methane as the reaction gas, plasma-enhanced che...

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Abstract

The invention provides a preparation method of a solid fluorescent carbon quantum dot. The method comprises the specific steps of ultrasonically washing a quartz wafer or a monocrystalline silicon wafer through acetone anhydrous ethanol; then ultrasonically flushing with deionized water; blowing to dry through nitrogen; pre-vacuumizing a reaction chamber under the temperature of 200-300 DEG C until the pressure is less than 10<-4>Pa; and preparing a film in which the carbon quantum dot is embedded on the quartz wafer or the monocrystalline silicon wafer in the reaction chamber through a plasmaenhanced chemical vapour deposition technique by treating methane as the working gas. The carbon quantum dot prepared by the method has the characteristics of being simple in processes, high in efficiency, short in circle, green, and environmentally friendly; the grown quantum dot has the properties such as high purity, small particle size and high fluorescent luminous efficiency. The fluorescentcarbon quantum dot prepared by the method has high potential application value in medical image, photoluminescence materials, various semiconductor luminous devices, etc.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a method for preparing a fluorescent carbon film material embedded with carbon quantum dots. Background technique [0002] Since entering the new century, nanomaterials have gradually entered various fields of our lives. So far, a variety of carbon-based fluorescent nanomaterials have been synthesized and applied, including: carbon nanodots, fluorescent carbon nanotubes, graphene oxide, polymer dots, graphene quantum dots, and nanodiamonds. Carbon nanodots (also called carbon quantum dots or carbon nanocrystals) have received a lot of attention since their discovery in the last century. Due to the excellent water solubility, dispersibility, chemical stability, low toxicity, biocompatibility, and good fluorescence characteristics of carbon quantum dots, they are widely used in medical imaging, photocatalysis, biosensors and various optoelectronic devi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/26C23C16/505B82Y40/00
CPCB82Y40/00C23C16/26C23C16/505
Inventor 姜礼华李明明孙宜华谭新玉肖婷向鹏
Owner CHINA THREE GORGES UNIV