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A drive circuit for nmos switching tube

A technology for driving circuits and switching tubes, applied in electrical components, adjusting electrical variables, and output power conversion devices, etc., can solve problems such as load damage and inrush current inflow, and achieve the effect of avoiding damage.

Active Publication Date: 2020-07-28
SHANGHAI AWINIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the existing NMOS switching tube is used as a load switch, it often occurs that a relatively large surge current flows into the load connected to it, which will cause certain damage to the load.

Method used

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  • A drive circuit for nmos switching tube
  • A drive circuit for nmos switching tube
  • A drive circuit for nmos switching tube

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Embodiment Construction

[0044] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0045]As mentioned in the background, MOSFET (metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor) is a commonly used load switch, which is divided into P-type and N-type. Since the mobility of the NMOS switch is higher than that of the PMOS (positive channel Metal Oxide Semiconductor, P-type metal oxide semiconductor) switch, that is, under the same area, the on-resistance of the NMOS is lower than that of the P...

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Abstract

The invention discloses an NMOS switch tube driving circuit. A boost open module outputs a turn-on voltage which can make an NMOS switch tube be turned on. After the NMOS switch tube is turned on, a superposed voltage of the turn-on voltage and a source voltage of the NMOS switch tube is output. Through turn-off control of the boost open module, the NMOS switch tube is turned off. After the NMOS switch tube is turned off, a discharge module releases charges of a grid electrode and a source electrode of the NMOS switch tube so that a purpose of rapidly turning off the NMOS switch tube is reached. Based on the condition that the NMOS switch tube is controlled to be normally turned on and turned off, a delay module can effectively control time for the boost open module to output a voltage tothe grid electrode of the NMOS switch tube and then effectively control turn-on time of the NMOS switch tube so that a purpose that the NMOS switch tube is slowly turned on is reached. A condition that a surge current with large transmission flows into a connected load is avoided and the load is prevented from being damaged.

Description

technical field [0001] The present invention relates to the technical field of driving an NMOS (Negative channel Metal Oxide Semiconductor, N-type metal oxide semiconductor) switch tube, and more specifically relates to a drive circuit for an NMOS switch tube. Background technique [0002] In an electronic system, a load switch is generally used to connect or isolate two ports, such as cutting off or connecting a power supply. The load switch and its control circuit can be integrated on the same IC (Integrated Circuit, integrated circuit), or can be discrete components. MOSFET (metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor) is a commonly used load switch, which is divided into P type and N type. Since the mobility of the NMOS switch is higher than that of the PMOS (positive channel Metal Oxide Semiconductor, P-type metal oxide semiconductor) switch, that is, under the same area, the on-resistance of the NMOS is lower th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/156
CPCH02M3/156
Inventor 罗旭程胡建伟程剑涛
Owner SHANGHAI AWINIC TECH CO LTD
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