Transistor and manufacturing method thereof
A manufacturing method and transistor technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as abnormal use, affecting product quality, and excessive changes in the conduction current of thin-film transistors, so as to improve reliability, The effect of reducing the drift amplitude
Active Publication Date: 2018-05-04
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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Problems solved by technology
[0003] When using BTS analog products for thin film transistors, the main method is to apply a certain voltage to the gate of the thin film transistor at a certain high temperature to open the channel of the thin film transistor, and measure the threshold voltage of the thin film transistor after a period of time. Excessive threshold voltage drift will lead to excessive changes in the conduction current of thin film transistors, which will affect product quality
If the threshold voltage of the thin film transistor drifts to a certain extent, it cannot be used normally
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[0018] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, the embodiments are provided to explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to particular intended uses.
[0019] In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like reference numerals refer to like components throughout the specification and drawings.
[0020] figure 1 is a schematic structural diagram of a transistor according to an embodiment of the present invention. Here, only an implementation structure of the transistor is shown, and the structure of the transistor of the present inve...
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The invention discloses a transistor. The transistor comprises a buffer layer on a substrate, a channel layer on the buffer layer, a gate insulating layer on the channel layer and a gate on the gate insulating layer, wherein corresponding ions are implanted in the buffer layer according to the channel type of the transistor to reduce the drift magnitude of the threshold voltage of the transistor.The invention also discloses a manufacturing method of the transistor. According to the transistor and the manufacturing method, corresponding ions are implanted according to the channel type of the transistor to reduce the drift magnitude of the threshold voltage of the transistor, and thus the reliability of the transistor is improved.
Description
technical field [0001] The invention belongs to the technical field of transistor fabrication, and in particular relates to a transistor capable of reducing the drift range of threshold voltage and a fabrication method thereof. Background technique [0002] In the display industry, device reliability has always been the key to product life. Bias Temperature Stress (BTS for short) and breakdown voltage (Breakdown Voltage) are generally used to judge the reliability of thin-film transistors (TFTs). . [0003] When using BTS analog products for thin film transistors, the main method is to apply a certain voltage to the gate of the thin film transistor at a certain high temperature to open the channel of the thin film transistor, and measure the threshold voltage of the thin film transistor after a period of time. Excessive threshold voltage drift will lead to excessive changes in the conduction current of the thin film transistor, thereby affecting product quality. If the thr...
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IPC IPC(8): H01L29/10H01L29/786H01L21/336
CPCH01L29/1033H01L29/66757H01L29/78696
Inventor 赵瑜
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD