Ultra-low quiescent dissipation LDO circuit and ultra-low quiescent dissipation LDO circuit for driving heavy load

A static power consumption, ultra-low technology, applied in the field of DC-DC devices, can solve problems such as affecting the service life of the circuit, the LDO circuit cannot operate normally, and the demand for LDO increasing, so as to prolong the service life, ensure stability, and effectively discharge. effect of current

Pending Publication Date: 2018-05-22
上海毅栈半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the development of science and technology, more and more electronic products have become indispensable in our lives. Commonly used handheld electronic devices such as mobile phones and digital cameras have widely used LDO circuits, that is, low-dropout linear stabilizers. It can provide a safe and stable DC regulated power supply for the load. With the improvement of energy saving and environmental protection requirements, the demand for low static power consumption LDO is increasing; in some ultra-low power

Method used

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  • Ultra-low quiescent dissipation LDO circuit and ultra-low quiescent dissipation LDO circuit for driving heavy load
  • Ultra-low quiescent dissipation LDO circuit and ultra-low quiescent dissipation LDO circuit for driving heavy load
  • Ultra-low quiescent dissipation LDO circuit and ultra-low quiescent dissipation LDO circuit for driving heavy load

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Such as figure 1 An ultra-low static power consumption LDO circuit is shown, including:

[0031] The voltage output terminal is used to output the modulated stable voltage;

[0032] The power transistor loop module connected to the power supply, and the power transistor loop module is connected to the voltage output terminal;

[0033] a grounded resistive feedback loop module, and the resistive feedback loop module is also connected to the power transistor loop module;

[0034] The gain amplifier module connected to the reference voltage, and the gain amplifier module is also connected with the resistance feedback loop module and the power transistor module. Optionally, the gain amplifier module is an amplifier;

[0035] The leakage current absorption module is grounded, and the leakage current absorption module is also connected to the power transistor loop module. Preferably, the leakage current absorption module is a reverse diode.

[0036] The working principle o...

Embodiment 2

[0038] This embodiment is based on the technical solution described in the first embodiment, and is further explained and supplemented.

[0039] In this embodiment, the leakage current absorbing module may include more than one reverse diode according to actual needs. Further, in order to increase the area of ​​the leakage current absorbing module and further enhance the ability to absorb leakage current, each reverse diode can be connected in parallel to the circuit. Specifically, one end of the parallel circuit is grounded, and the other end is connected to the power transistor loop module . At no load, the leakage current will be along the figure 1 The direction indicated by the dotted line flows to the reverse diode, so that the LDO circuit described in this embodiment plays the role of discharging the quiescent current, thereby ensuring the stability of the voltage and prolonging the service life.

Embodiment 3

[0041] This embodiment is based on the technical solutions described in Embodiment 1 and Embodiment 2, and is further explained and supplemented.

[0042] Such as figure 1 As shown, in this embodiment, the gain amplifier module is a comparative amplifier, one input terminal is connected to the reference voltage, the other input terminal is connected to the feedback loop module, and the output terminal of the comparative amplifier is connected to the leakage current absorption module.

[0043] In this embodiment, the power transistor loop module is a series-connected adjustment transistor or a metal-oxide-semiconductor field-effect transistor (MOSFET).

[0044] In this embodiment, the resistor feedback loop module includes resistors Rf1 and Rf2 connected in series, wherein Rf1 is connected to the power transistor loop module, Rf2 is grounded, and the gain amplifier module is connected between Rf1 and Rf2.

[0045] In this embodiment, the voltage output terminal is connected to...

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PUM

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Abstract

The invention discloses an ultra-low quiescent dissipation LDO circuit. The LDO circuit includes a voltage output end for outputting a modulated stabilized voltage, a power transistor loop module which is connected to a power supply and connected with the voltage output end, a grounded resistance feedback loop module which is connected with the power transistor loop module, a gain amplification-level module which is connected to a reference voltage and connected with the resistance feedback loop module and the power transistor loop module, and a grounded leak current absorption module which isconnected with the power transistor loop module. The LDO circuit can absorb leak current generated by the circuit when a load current is zero so that a quiescent current can be released, it is prevented that the output voltage rises due to the resistance feedback loop module with a high resistance, the service life of the load circuit can be prolonged, and meanwhile, the stability of the output voltage is ensured.

Description

technical field [0001] The invention relates to the field of DC-DC devices, in particular to an LDO circuit with ultra-low static power consumption. Background technique [0002] With the development of science and technology, more and more electronic products have become indispensable in our lives. Commonly used handheld electronic devices such as mobile phones and digital cameras have widely used LDO circuits, that is, low-dropout linear stabilizers. It can provide a safe and stable DC regulated power supply for the load. With the improvement of energy saving and environmental protection requirements, the demand for low static power consumption LDO is increasing; in some ultra-low power consumption applications such as the Internet of Things, handheld devices, etc., The system needs an LDO with static power consumption at the nA level to improve energy efficiency; however, under the existing technology, the leakage current of the device itself is at the nA level, which wil...

Claims

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Application Information

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IPC IPC(8): G05F1/56
CPCG05F1/561
Inventor 虞海燕
Owner 上海毅栈半导体科技有限公司
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