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A reverse resistance type vdmos device

A reverse resistance type, device technology, applied in the field of power semiconductors, can solve problems such as increased on-resistance, and achieve the effects of reducing thickness, low on-resistance, and preventing punch-through effect

Active Publication Date: 2020-12-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, to ensure that the power VDMOS with reverse blocking capability does not have a punch-through breakdown between the body region of the source end and the Schottky junction of the drain end during forward and reverse withstand voltages, it must have sufficient drift region length, and increase The length of the drift region means that the on-resistance increases

Method used

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  • A reverse resistance type vdmos device
  • A reverse resistance type vdmos device
  • A reverse resistance type vdmos device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Such as image 3 As shown, a reverse-resistance VDMOS device includes a metallized drain 1, an N-type lightly doped region 2, an N-type drift region 4, and a metallized source 16 that are sequentially stacked from bottom to top; The lower surface of the doped region 2 is in direct contact with the upper surface of the metallized drain 1 and forms a Schottky contact; the lower surface of the N-type drift region 4 has an N-type forward field stop layer 3, and the forward field The blocking layer 3 is located directly above the N-type lightly doped region 2 and is in direct contact with the N-type lightly doped region 2; the upper surface of the N-type drift region 4 has an N-type reverse field blocking layer 5, a P-type body region 6. The side of the N-type drift region 4 has a trench 10; the upper surface of the N-type reverse field stop layer 5 is in contact with the lower surface of the P-type body region 6; the upper surface of the P-type body region 6 It also has an...

Embodiment 2

[0024] Such as Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that the trench 10 starts from the lower surface of the metallized source 16 and runs vertically downwards through the N-type source region 8, the P-type body region 6, and the N-type reverse region. Field stop layer 5, N-type drift region 4, N-type forward field stop layer 3, N-type lightly doped region 2, the trench 10 is in contact with the upper surface of the metallized drain 1, and the polysilicon field plate 9 and N The N-type drift region 4 , the N-type forward field stop layer 3 , and the N-type lightly doped region 2 are separated by an oxide layer 11 . This can further reduce the reverse leakage of the Schottky junction during reverse blocking.

[0025] The silicon material in the device can be replaced by silicon carbide, gallium arsenide, indium phosphide or silicon germanium semiconductor materials.

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Abstract

The invention provides a reverse-resistance VDMOS device, which comprises a metallized drain, an N-type drift region, and a metallized source stacked sequentially from bottom to top; the lower surface of the N-type drift region has an N-type positive field stop layer, The upper surface of the N-type drift region has an N-type reverse field stop layer, a P-type body region, and a groove on the side of the N-type drift region. The groove runs through the N-type source region vertically downward from the lower surface of the metallized source. , P-type body region, N-type reverse field stop layer, N-type drift region, N-type forward barrier layer; there is an oxide layer, a polysilicon gate electrode and a polysilicon field plate in the trench, and the polysilicon field plate and the polysilicon gate electrode Through the isolation of the oxide layer, the polysilicon field plate, the N-type drift region, and the N-type forward barrier layer are separated by the oxide layer. A reverse-blocking VDMOS device provided by the present invention has reverse blocking capability, and at the same time, the presence of the field stop layer The punch-through effect of the electric field in the drift region is prevented, the thickness of the drift region is reduced, and the device can obtain a lower on-resistance.

Description

technical field [0001] The invention relates to power semiconductor technology, in particular to a reverse resistance VDMOS device. Background technique [0002] VDMOS (Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor) has the advantages of high switching speed, low switching loss, and low driving loss, and plays an important role in various power conversions, especially high-frequency power conversions. Power conversion usually includes several conversion methods from alternating current to direct current (AC-DC), direct current to alternating current (DC-AC), direct current to direct current (DC-DC) and alternating current to alternating current (AC-AC). AC-AC can use indirect conversion, that is, AC-DC-AC, or direct conversion, that is, AC-AC. Because the AC-DC-AC indirect conversion system requires a large-capacity connection capacitor (voltage-type conversion) or a large-inductance connection inductance (current-type conversion) to connect two...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78
CPCH01L29/7802
Inventor 任敏王梁浩杨梦琦宋炳炎何文静李泽宏高巍张金平张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA