Drive circuit for power semiconductor element, power conversion unit, and power conversion device

A technology of power semiconductors and drive circuits, which is applied in the direction of output power conversion devices, electrical components, electronic switches, etc., and can solve the problems of not being able to maximize the performance of power semiconductor components, limiting the number of parallel connections, and increasing costs.

Active Publication Date: 2018-06-08
HITACHI LTD
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, the performance of power semiconductor components cannot be maximized
[0004] In addition, by selecting power semiconductor elements and combining power semiconductor elements wi...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Drive circuit for power semiconductor element, power conversion unit, and power conversion device
  • Drive circuit for power semiconductor element, power conversion unit, and power conversion device
  • Drive circuit for power semiconductor element, power conversion unit, and power conversion device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0056] For this reason, in this embodiment, in figure 1 In the drive circuit 1 of the power semiconductor element shown, when the plurality of power semiconductor elements 2 and 3 connected in parallel are simultaneously driven to switch, the current fluctuations during the turn-on / off, that is, the switching operation and the steady-state operation are improved. balance. Here, the "steady-state operation" refers to the operation from after the power semiconductor elements 2 and 3 are turned on to before they are turned off, that is, the operation when the power semiconductor elements 2 and 3 are turned on.

[0057] In the driving circuit 1 according to this embodiment, the power conversion modules 11 - 1 and 11 - 2 connected in parallel, and each of the upper arm driving circuit 4 and the lower arm driving circuit 5 provided corresponding to the plurality of power semiconductor elements 2 and 3 Both have a storage unit 51 for storing characteristic information of the power s...

Embodiment 1

[0062] Figure 4 This is an example of a block diagram showing the configuration of the power semiconductor element drive circuit 1 according to the first embodiment. The specific configuration of the lower arm drive circuit 5 of the power conversion units 11 - 1 and 11 - 2 will be described below, but the upper arm drive circuit 4 also has the same configuration. The lower arm drive circuit 5 (hereinafter simply referred to as "drive circuit 5") includes a storage unit (storage device) 51, an interface (I / F) circuit unit 52, a delay circuit unit 53, a gate voltage gradient variable circuit unit 54, and Gate voltage variable circuit section 55 .

[0063] The storage unit 51 stores characteristic information of the lower arm power semiconductor element 3 . The information stored in the storage unit 51 is preferably, for example, information on a characteristic distribution map of each power semiconductor element acquired at the time of shipment inspection of the power semicon...

Embodiment 2

[0076] Example 2 is a modified example of Example 1. Figure 8 This is an example of a block diagram showing the configuration of a drive circuit 1 for a power semiconductor element according to the second embodiment. Such as Figure 8 As shown, the driving circuit 1 of the power semiconductor element according to the second embodiment includes current sensors 61-1, 61-2 and a current calculation circuit in addition to the components of the driving circuit 1 of the power semiconductor element according to the first embodiment. The configuration of the parts 62-1 and 62-2.

[0077] Current sensors 61 - 1 and 61 - 2 detect information corresponding to currents flowing through power semiconductor elements 2 and 3 . Current calculation units 62-1 and 62-2 calculate currents actually flowing through power semiconductor elements 2 and 3 based on detection outputs (detection information) of current sensors 61-1 and 61-2. In this example, the current sensors 61 - 1 and 61 - 2 and t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This drive circuit for a power semiconductor element is a drive circuit that is provided in correspondence with each of multiple power semiconductor elements connected in parallel, and that drives thepower semiconductor element. This drive circuit for a power semiconductor element is equipped with a storage unit that stores characteristic information of the power semiconductor element, and a gatedrive control unit that controls the drive conditions for a gate of the power semiconductor element on the basis of the characteristic information stored in the storage unit.

Description

technical field [0001] The invention relates to a driving circuit of a power semiconductor element, a power conversion assembly and a power conversion device. Background technique [0002] As the power conversion device, there are an inverter device for converting DC power to AC power, and a converter device for converting AC power to DC power. In these power conversion devices, although the power conversion is performed by the switching operation of the power semiconductor elements, a plurality of power semiconductor elements are connected in parallel for the purpose of increasing the converted power capacity, and these power semiconductor elements are simultaneously driven by switching. . [0003] In the case of connecting and driving a plurality of power semiconductor elements in parallel in this way, due to variations in the characteristics inherent to the elements such as threshold voltage and turn-on voltage in each power semiconductor element, there may be a problem ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H02M1/08H02M1/00H03K17/08H03K17/12H03K17/567
CPCH02M1/08H03K17/08H03K17/12H03K17/56
Inventor 三间彬
Owner HITACHI LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap