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Image sensor and manufacturing method thereof

A pixel area and color filter technology, applied in the direction of electric solid-state devices, semiconductor devices, radiation control devices, etc., can solve the problems of area and cost waste, unsuitable for installing micro-lenses, unevenness, etc.

Inactive Publication Date: 2018-06-22
HUAIAN IMAGING DEVICE MFGR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the image sensor, different areas may be uneven due to height differences, and it is usually not suitable to install microlenses on these uneven areas, which will cause waste of area and cost

Method used

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  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0016] An image sensor may include a pixel region having pixel cells for sensing radiation and a logic region having structures for performing other processing. A color filter and a microlens may be sequentially arranged above the pixel units in the pixel area.

[0017] The structure of the pixel units in the pixel region may be the same, but the color filters formed on the pixel units may be different, so that the pixel units can be used to sense radiation in different frequency bands respectively. A plurality of pixel units arranged in an array may include a plurality of groups, for example, each group may include two pixel units for sensing green light, one pixel unit for sensing red light, and one pixel unit for sensing The pixel unit for measuring blue light, this grouping structure is also called Bayer arrangement.

[0018] The microlens in the pixel area is an optical element, including a refracting microlens based on the refraction theory of light, a diffractive micro...

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PUM

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Abstract

The invention relates to an image sensor and a manufacturing method thereof and provides a method for manufacturing the image sensor. The method is characterized by comprising the steps of providing asemiconductor substrate, wherein the semiconductor substrate comprises a pixel area and a logic area; a plurality of pixel units are formed in the pixel area; and a height difference exists between the logic area and the pixel area; and forming a groove in the position, next to the logic area, of the pixel area.

Description

technical field [0001] The present disclosure relates generally to the field of semiconductors, and in particular, to image sensors and methods of manufacturing the same. Background technique [0002] In the image sensor, a radiation sensor for sensing radiation, a color filter disposed over the radiation sensor, and a microlens disposed over the color filter may be included. Among them, as an optical device, the microlens needs to be installed on a flat surface to function normally. However, in the image sensor, different areas may be uneven due to height differences, and it is usually not suitable to install microlenses on these uneven areas, which will result in waste of area and cost. [0003] Therefore, there is a need for new techniques. Contents of the invention [0004] An object of the present disclosure is to provide a novel image sensor and manufacturing method thereof, in particular, related to avoiding area waste due to height differences existing between di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14645H01L27/14683
Inventor 王亮李志伟冉春明
Owner HUAIAN IMAGING DEVICE MFGR CORP