Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Transistor device

A transistor and semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of conductivity change, poor operation stability of electronic components, and on-voltage offset, and achieve the effect of avoiding stress concentration effect.

Active Publication Date: 2018-06-29
HANNSTAR DISPLAY CORPORATION
View PDF26 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Many semiconductor materials may change their conductivity (or semiconducting properties) after being stressed, which leads to poor operational stability of electronic components
For example, a transistor element using semiconductor material as a channel layer may experience a shift in the conduction voltage (or threshold voltage) or a phenomenon of leakage current after being stressed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transistor device
  • Transistor device
  • Transistor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Reference will now be made in detail to the exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers have been used in the drawings and description to refer to the same or like parts.

[0031] figure 1 is a schematic top view of a transistor device according to an embodiment of the present invention, figure 2 for figure 1 A schematic cross-section of the line A-A, image 3 for figure 1 Schematic cross-section of line B-B. Please also refer to Figure 1 to Figure 3 , the transistor device 100 may be disposed on the substrate 10 as an element having a switching function. The transistor structure 100 includes a semiconductor material layer 110 , a gate layer 120 and an insulating layer 130 . The semiconductor material layer 110 can be directly disposed on the substrate 10 , however, in other embodiments, other film layers, such as a buffer layer, can exist between the semic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A transistor device including a semiconductor material layer, a gate layer, and an insulation layer is provided. The semiconductor material layer includes a first conductive portion, a second conductive portion, a channel portion between the first conductive portion and the second conductive portion, and a first protruding portion formed integrally. The channel portion has a first boundary adjacent to the first conductive portion, a second boundary adjacent to the second conductive portion, a third boundary, and a fourth boundary. The third boundary and the fourth boundary connect the terminals of the first boundary and the second boundary. The first protruding portion is protruded outwardly from the third boundary of the channel portion. The gate layer crosses and overlaps the channel portion. The first gate boundary and the second gate boundary of the gate layer are overlapped with the first boundary and the second boundary of the channel portion. The insulation layer is disposed between the gate layer and the semiconductor material layer.

Description

technical field [0001] The present invention relates to an electronic component, and in particular to a transistor device. Background technique [0002] With the development of manufacturing technology of electronic components, the research and development of flexible electronic products has become more and more vigorous. The main problem that flexible electronic products, such as flexible display panels, must overcome is that the electronic product will be continuously bent during use, so that components in the electronic product may be easily damaged due to the application of stress. Especially in electronic components, in order to realize the performance of the product, it is necessary to use semiconductor materials. Many semiconductor materials may change their electrical conductivity (or semiconductor properties) after being subjected to stress, which leads to poor operational stability of electronic components. For example, a transistor element using semiconductor ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/78H01L29/06H01L29/10H01L29/423
CPCH01L29/0684H01L29/1033H01L29/4232H01L29/78H01L29/78696H01L29/78675H01L29/66757H01L29/42384H01L29/41733H01L29/49
Inventor 王泰瑞张祖强冯捷威颜劭安陈韦翰
Owner HANNSTAR DISPLAY CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com