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A novel near-infrared laser crystal of bismuth and potassium double-doped yttrium aluminate and its preparation method

A laser crystal, yttrium aluminate technology, applied in lasers, crystal growth, laser parts and other directions, to achieve the effect of improving segregation coefficient and improving laser output efficiency

Active Publication Date: 2019-12-24
JINAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are no relevant reports on bismuth potassium double-doped yttrium aluminate crystals at home and abroad

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  • A novel near-infrared laser crystal of bismuth and potassium double-doped yttrium aluminate and its preparation method

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Experimental program
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Embodiment 1

[0029] This embodiment discloses a bismuth-potassium double-doped yttrium aluminate near-infrared laser crystal, which allows bismuth ions to exist stably in a low-valence state and effectively improves the segregation coefficient of bismuth ions. The crystal can realize near-infrared laser output, and has important application prospects in the fields of communication, medical treatment, scientific research and military affairs.

[0030] The yttrium aluminate near-infrared laser crystal is characterized in that bismuth ions and potassium ions are simultaneously doped in the yttrium aluminate crystal, the bismuth ions are used as active ions, and the potassium ions are used as optimized ions, which can provide compensation for local charges, bismuth potassium Bi 3+ will obtain relative to single-doped Bi 3+ At the same time, more electrons are obtained, more low-valence bismuth ions are formed, and the segregation coefficient of bismuth ions in the crystal is increased.

[00...

Embodiment 2

[0034] as attached figure 1 As shown, this embodiment discloses a method for preparing a novel near-infrared laser crystal of bismuth-potassium double-doped yttrium aluminate. The preparation method includes the following steps:

[0035] Bi with a purity of 99.999% 2 o 3 、K 2 CO 3 , Y 2 o 3 and Al 2 o 3 As a raw material, the molar ratio of [Y] and [Al] is 1:1, the doping amount of bismuth ions is 0.1-15 at.%, the doping amount of potassium ions is 0.1-15 at.%, and the raw materials are ground and mixed evenly. Briquette sintering;

[0036] Put the sintered raw materials into the iridium crucible, and completely replace the air in the single crystal furnace with high-purity nitrogen or inert gas. 6~16r / min;

[0037] After the crystal growth is completed, the temperature needs to be lowered slowly near the growth temperature, with a cooling gradient of 40-50°C / h.

Embodiment 3

[0039] This embodiment discloses another method for preparing a bismuth potassium double-doped yttrium aluminate novel near-infrared laser crystal. The preparation method includes the following steps:

[0040] Bi with a purity of 99.99% 2 o 3 、K 2 CO 3 , Y 2 o 3 and Al 2 o 3 Mix according to the ratio of materials, and then mix in a mixer for 5-20 hours.

[0041] The raw material is pressed into a cylindrical cake under a pressure of 1-5Gpa.

[0042]Put the material cake into the muffle furnace, heat up to 1000-1200°C in 5-10 hours, sinter at this temperature for 20-30 hours, and cool it down to room temperature in 10-15 hours, so that the solid-phase reaction of the mixture can fully occur. Bismuth and potassium double-doped yttrium aluminate crystal powder can be obtained.

[0043] Put the above raw materials into an iridium gold crucible, use medium frequency induction heating, and use YAP crystal as a seed crystal. Adopt the Czochralski pulling method to grow alo...

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Abstract

The invention discloses a bismuth-potassium double-doped yttrium aluminate novel near-infrared laser crystal and a preparation method of the laser crystal, and belongs to the field of near-infrared laser gain materials. In the laser crystal, the bismuth-potassium double-doped yttrium aluminate crystal is doped with bismuth ions and potassium ions at the same time, wherein the doping amount of thebismuth ions is 0.1-15 at.%, and the content of the potassium ions is 0.1-15 at.%. According to the bismuth-potassium double-doped crystal, the bismuth ions are used as activation ions; the potassiumions are used as optimization ions and provide a compensation effect of partial charges; during bismuth-potassium double doping, Bi<3+> with easily variable valence can obtain more electron than Bi<3+> during dingle doping, so that more low-valence bismuth ions are formed; meanwhile, the segregation coefficient of the bismuth ions is improved, so that the near-infrared luminous efficiency of the bismuth ions is effectively improved. The enhancement of fluorescence output is realized, the laser threshold is reduced, and the laser efficiency is improved. The laser crystal has an important application prospect in the fields of military, medical treatment, scientific research, communication and the like.

Description

technical field [0001] The invention relates to the technical field of near-infrared laser gain materials, in particular to a bismuth-potassium double-doped yttrium aluminate novel near-infrared laser crystal and a preparation method thereof. Background technique [0002] Near-infrared lasers have broad application prospects in optical communications, ultrafast photonics, lidar, remote sensing detection, photoelectric countermeasures, medical treatment, scientific research, and other fields. In 2001, Japanese scholar Fujimoto et al. reported for the first time the near-infrared broadband luminescence of bismuth-doped glass, and bismuth ions became one of the effective ions for near-infrared ultra-broadband laser output. Bismuth ions not only have broadband luminescence in the near-infrared band, but also have broadband luminescence in the mid-infrared band, and have the advantages of wide half-peak width and long fluorescence lifetime. [0003] At present, the research on b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/24C30B15/00H01S3/16
CPCC30B15/00C30B29/24H01S3/1601H01S3/1638
Inventor 张沛雄黄杏彬尹浩朱思祁李真
Owner JINAN UNIVERSITY