Memory data reading and writing method and device

A memory data and data technology, which is applied in the fields of electrical digital data processing, special data processing applications, memory systems, etc., can solve problems such as low memory access efficiency, and achieve the effect of improving data access efficiency.

Active Publication Date: 2018-07-13
TENCENT TECH (SHENZHEN) CO LTD
View PDF9 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, memory ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory data reading and writing method and device
  • Memory data reading and writing method and device
  • Memory data reading and writing method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0050] The data storage method of the memory in the related technology mainly adopts two methods. Method 1: only adopts the sequential storage method. When there is data that needs to be additionally written, it is stored sequentially in the memory according to a specific order, so that the access frequency is higher. The data cannot be accessed in priority, resulting in the problem of low hit rate of data with high access frequency; Method 2: Set up LRU cache storage in the memory. When the storage space in the cache is insufficien...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a memory data reading and writing method and device. The memory data writing method comprises the steps of obtaining first data needing to be written in a memory, adopting the first data as final access data, storing the data into a hash table, if the storage space of the hash table is not enough, deleting earliest access second data from the hash table, and storing the second data into an ordered list. Due to the two storage modes of establishing the hash table and the ordered list, different storage modes are adopted for different data, the data access efficiency is improved, and the problems that in the prior art, data storage in the memory only supports the mode for building the least recently used cache (LRU cache) for storing the data with the high access frequency, or the ordered list based on an index sequence is adopted for storage, the data access speed under the LRU cache mode at the low access frequency is low, the data hit rate at the high access frequency under the ordered list mode is poor, and the memory data access efficiency is low are solved.

Description

technical field [0001] The invention relates to the technical field of computer data storage, in particular to a method and device for reading and writing memory data. Background technique [0002] The memory set in the computer equipment is used to store data, and it has high-speed data read and write capabilities compared with disks. In order to meet the needs of the processor for high-speed data access and processing, some data needs to be stored in the memory of the computer device. [0003] In the related technology, the data storage in the memory adopts the least recently used cache (Last Recently Used cache, LRU cache) storage method to store the data with high access frequency, or stores the data in an ordered list according to the index order. LRU cache has a higher hit rate for frequently accessed hotspot data, but the access speed of non-hotspot data is slower; compared with LRU cache, the way of ordered table storage improves the access speed of non-hotspot data...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F17/30G06F12/123
CPCG06F12/123G06F16/2255
Inventor 山宝银刘豪余豪阳刘昕钟科赵政
Owner TENCENT TECH (SHENZHEN) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap