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A kind of efuse storage circuit

A storage circuit and storage unit technology, applied in information storage, static memory, read-only memory, etc., can solve the problems of unfavorable eFuse stability and reliability, and achieve the effect of single power supply and improved stability

Active Publication Date: 2021-06-04
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The common architecture of the existing eFuse storage unit uses the programming transistor to provide current for fuse programming. Usually, one programming transistor is often mounted with many bitcells (storage units), so there will be very long metal traces, and the following With the continuous reduction of eFuse process size, the IR drop (voltage drop) on the metal wiring is getting larger and larger, so that the output voltage of the programming transistor has a large fluctuation range, and the programming current of the fuse is also in a large range. range, which is detrimental to eFuse stability and reliability

Method used

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  • A kind of efuse storage circuit
  • A kind of efuse storage circuit
  • A kind of efuse storage circuit

Examples

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Embodiment

[0048] like figure 2 A structural block diagram of an eFuse storage circuit according to an embodiment of the present invention is shown. like figure 2 As shown, the eFuse storage circuit 200 according to this embodiment includes a memory cell array 300 and a sense amplifier 400, specifically,

[0049] The memory cell array 300 includes a plurality of memory cells for storing binary 0 or 1, thereby storing data;

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Abstract

The present invention provides an eFuse storage circuit, comprising: a storage cell array, which includes a plurality of storage cells; a sense amplifier, connected to the storage cell array, for detecting the state of the eFuse storage circuit, wherein the The working state of the memory cell array is controlled by its control terminal array, so that one of the plurality of memory cells is in a programming state or a reading state. The eFuse storage circuit of the present invention integrates the programming control terminal and the reading control terminal of the fuse into the storage unit, and directly supplies power to the storage unit during programming, thereby improving the stability of the programming current of the storage unit array; and when the programming current is not special When large or area requirements are not very strict, a single power supply can be implemented.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to an eFuse storage circuit. Background technique [0002] eFuse (electrically programmable fuse) is a one-time programmable memory. With the gradual maturity of eFuse theory and technology, the application range of eFuse is expanding rapidly. [0003] The common architecture of the existing eFuse storage unit uses the programming transistor to provide current for fuse programming. Usually, one programming transistor is often mounted with many bitcells (storage units), so there will be very long metal traces, and the following With the continuous reduction of eFuse process size, the IR drop (voltage drop) on the metal wiring is getting larger and larger, so that the output voltage of the programming transistor has a large fluctuation range, and the programming current of the fuse is also in a large range. range, which is detrimental to eFuse stability and reliability. [0004]...

Claims

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Application Information

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IPC IPC(8): G11C17/16G11C17/18
CPCG11C17/16G11C17/18
Inventor 罗睿明陈先敏杨家奇吴蕾
Owner SEMICON MFG INT (SHANGHAI) CORP
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