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Ozone gas heating mechanism, substrate processing device, and substrate processing method

A substrate processing device and gas heating technology, applied in electrical components, semiconductor/solid-state device manufacturing, discharge tubes, etc., can solve problems such as the influence of oxide film characteristics, and achieve the effect of reducing the deviation of substrate temperature

Active Publication Date: 2021-11-16
TOKYO ELECTRON LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when a large flow rate of ozone gas is supplied to the processing chamber, the temperature of the substrate may drop to affect the properties of the formed oxide film.

Method used

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  • Ozone gas heating mechanism, substrate processing device, and substrate processing method
  • Ozone gas heating mechanism, substrate processing device, and substrate processing method
  • Ozone gas heating mechanism, substrate processing device, and substrate processing method

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Embodiment Construction

[0019] Hereinafter, modes for implementing the present invention will be described with reference to the drawings. In addition, in this specification and drawings, the same code|symbol is attached|subjected to the structure which is substantially the same, and repeated description is abbreviate|omitted.

[0020] A substrate processing apparatus according to an embodiment of the present invention will be described. figure 1 It is a schematic cross-sectional view of the substrate processing apparatus according to the embodiment of the present invention.

[0021] Such as figure 1 As shown, the substrate processing apparatus 1 has a substantially cylindrical processing container 4 whose longitudinal direction is in the vertical direction. The processing container 4 has a double pipe structure including an outer cylinder 6 having a top and an inner cylinder 8 arranged concentrically with the outer cylinder 6 inside the outer cylinder 6 and having a top. The lower end of the in...

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Abstract

Provided are an ozone gas heating mechanism, a substrate processing apparatus, and a substrate processing method that reduce variations in substrate temperature due to supply of ozone gas. An ozone gas heating mechanism according to one embodiment includes: a gas supply unit, which is installed in a processing container of a substrate processing apparatus, and capable of supplying ozone gas to a substrate; and a gas supply pipe, which is connected to the gas supply unit and capable of supplying the gas A supply unit supplies the ozone gas; and a pipe heating unit provided in the gas supply pipe for heating the ozone gas in the gas supply pipe.

Description

technical field [0001] The invention relates to an ozone gas heating mechanism, a substrate processing device and a substrate processing method. Background technique [0002] Conventionally, in semiconductor manufacturing processes, ozone (O 3 )gas. Ozone gas is an unstable gas, so it has the ability to decompose and become stable oxygen (O 2 ) properties of the gas. Ozone gas is gradually decomposed at room temperature, but when it exceeds 200° C., ozone gas decomposes in about 2 to 3 seconds. Therefore, when ozone gas is used as a process gas, generally, ozone gas is supplied to a process container at room temperature (ordinary temperature) without heating. [0003] In addition, in recent years, there is a tendency to supply a large flow rate of ozone gas to a processing container to perform processing. However, when a large flow rate of ozone gas is supplied to the processing chamber, the temperature of the substrate may drop to affect the properties of the formed ox...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/3244H01J37/32522H01L21/67109H01L21/67017H01L21/67098H01L21/67248
Inventor 吉田崇佐藤健一矢野哲也
Owner TOKYO ELECTRON LTD