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A wafer bonding method

A wafer bonding and wafer technology, which is applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of poor bonding wafer uniformity and high wafer bonding distortion, and achieve improved Improve product performance and improve the effect of vacuum adsorption capacity

Active Publication Date: 2020-12-04
WUHAN XINXIN SEMICON MFG CO LTD
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AI Technical Summary

Problems solved by technology

In the wafer bonding method of the prior art, the degree of distortion of the wafer bonding is relatively high, which leads to poor uniformity of the bonded wafers in the three-dimensional integrated circuit, which has become a technical problem to be solved urgently by those skilled in the art.

Method used

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Embodiment Construction

[0022] In a three-dimensional integrated circuit, such as a back-illuminated CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) image sensor, its manufacturing process needs to penetrate the silicon substrate to align the device wafer microlens, metal grid and substrate photodiode. The wafer bonding twist is the main factor affecting the through-wafer alignment, therefore, improving the wafer bonding twist can effectively improve the alignment accuracy of the through-wafer, thereby improving the uniformity of the bonded wafer.

[0023] The inventor obtained a wafer bonding distortion of about 70nm by measuring a lithography machine. In this wafer bonding method, after the previous process of the first wafer and the second wafer is completed, the The front side of the first wafer is bonded to the front side of the second wafer. The wafer bonding twist obtained by this wafer bonding method is relatively high, which leads to low accuracy of th...

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Abstract

The invention discloses a wafer bonding method. After the first wafer and the second wafer are provided, the wafer is bonded on the front side of the first wafer and on the side of the second wafer. Before the front side bonding step, add a pretreatment step, the pretreatment process can reduce (or even remove) the residue on the backside of the first wafer and / or the backside of the second wafer, The defect condition of unevenness of the back side of the first wafer and / or the back side of the second wafer can be improved, thereby bonding the front side of the first wafer to the front side of the second wafer In the step of bonding, the vacuum adsorption capacity of the chuck of the bonding machine on the back of the wafer (the first wafer and / or the second wafer) can be improved, and the twist of the wafer bonding can be effectively improved (reduced). Low wafer bond twist is beneficial to improve the uniformity of bonded wafers, which ultimately improves product performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer bonding method. Background technique [0002] The emergence of three-dimensional integrated circuits provides a new technical solution for the continuous development of semiconductor and microelectronics technology. The performance of the chip can be improved by three-dimensional integration of two or more chips with the same or different functions, and it can also be greatly improved. The metal interconnection between functional chips is greatly shortened, heat generation, power consumption and delay are reduced, and it is possible to realize a system-on-chip with complex functions. [0003] In three-dimensional integrated circuits, the wafer bonding method is the core focus, and the wafer bonding twist is a core parameter to measure the wafer bonding method, and the wafer bonding twist will affect the uniformity of the bonded wafer. In the wafer bon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/18
CPCH01L21/187
Inventor 邹文胡胜
Owner WUHAN XINXIN SEMICON MFG CO LTD
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