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A p-type cu containing sb 2.856 in 4 te 8 High-temperature thermoelectric material in matrix and its preparation process

A cu2.856sb0.6in4te8, cu2.856in4te8 technology, applied in the field of new materials, can solve the problems of insufficient performance of ternary semiconductors, low operating temperature, poor thermoelectric performance, etc., and achieve low cost, reliable operation and long life. Effect

Active Publication Date: 2021-09-28
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the problem of insufficient performance of wide bandgap Cu-In-Te ternary semiconductor, the present invention aims to provide a kind of P-type Cu containing Sb with higher performance to the art. 2.856 In 4 Te 8 Based on high-temperature thermoelectric materials and their preparation process, it can solve the technical problems of poor thermoelectric performance and low service temperature of existing similar materials

Method used

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  • A p-type cu containing sb <sub>2.856</sub> in <sub>4</sub> te <sub>8</sub> High-temperature thermoelectric material in matrix and its preparation process
  • A p-type cu containing sb <sub>2.856</sub> in <sub>4</sub> te <sub>8</sub> High-temperature thermoelectric material in matrix and its preparation process

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] According to the chemical formula Cu 2.856 In 4 Te 8 The three-element particles of Cu, In and Te with a purity greater than 99.999wt.% are weighed and directly placed in a quartz tube for vacuum packaging. Then melt and synthesize at 850°C for 24 hours, then cool down to 390°C and anneal for 72 hours after melting and synthesis, crush and ball mill the annealed ingot. The ball milling time is controlled at 5 hours. Sintering, sintering time 8 minutes, sintering temperature 650 ° C, sintering pressure 55MPa, prepared Cu 2.856 In 4 Te 8 thermoelectric materials.

Embodiment 2

[0015] According to the chemical formula Cu 2.856 Sb 0.25 In 4 Te 8 Cu, Sb, In, and Te four-element particles with a purity greater than 99.999wt.% are weighed and directly placed in a quartz tube for vacuum packaging. Then melt and synthesize at 850°C for 24 hours, then cool down to 390°C and anneal for 72 hours after melting and synthesis, crush and ball mill the annealed ingot. The ball milling time is controlled at 5 hours. Sintering, sintering time 8 minutes, sintering temperature 650 ° C, sintering pressure 55MPa, prepared Cu 2.856 Sb 0.25 In 4 Te 8 thermoelectric materials.

Embodiment 3

[0017] According to the chemical formula Cu 2.856 Sb 0.5 In 4 Te 8 Cu, Sb, In, and Te four-element particles with a purity greater than 99.999wt.% are weighed and directly placed in a quartz tube for vacuum packaging. Then melt and synthesize at 850°C for 24 hours, then cool down to 390°C and anneal for 72 hours after melting and synthesis, crush and ball mill the annealed ingot. The ball milling time is controlled at 5 hours. Sintering, sintering time 8 minutes, sintering temperature 650 ° C, sintering pressure 55MPa, prepared Cu 2.856 Sb 0.5 In 4 Te 8 thermoelectric materials.

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Abstract

The present invention relates to a kind of P-type Cu containing Sb 2.856 In 4 Te 8 Based on high-temperature thermoelectric materials and their preparation process, the key points of the design are Cu 2.856 In 4 Te 8 The Sb element with a mole fraction of 0.0388 is directly added to the alloy to form Sb-containing Cu 2.856 In 4 Te 8 Based thermoelectric material, the chemical formula is Cu 2.856 Sb 0.6 In 4 Te 8 The preparation process is as follows: according to the chemical formula, the four elements of Cu, In, Sb and Te are weighed according to the corresponding amount, and vacuum smelted at 800-900° C. for 24 hours. After smelting, cool to 390°C and anneal for 72 hours. The annealed ingot is pulverized and ball milled. The powder after ball milling is formed by discharge plasma spark sintering in a short time. The sintering time is 5-10 minutes, the sintering temperature is 600-700°C, The pressure is 50 ~ 60MPa, the prepared Cu 2.856 Sb 0.6 In 4 Te 8 thermoelectric materials. The thermoelectric material has no pollution and no noise, can be applied to the production of medium and high temperature power generation components, and has the advantages of reliable operation, long service life and simple preparation process.

Description

technical field [0001] The invention relates to the field of new materials, and is suitable for the key component material of medium and high temperature power generation for direct conversion of heat energy and electric energy, and is a P-type Cu containing Sb 2.856 In 4 Te 8 Base medium high temperature thermoelectric materials and their preparation process. Background technique [0002] Thermoelectric semiconductor material is a new type of semiconductor functional material that realizes direct mutual conversion of electric energy and thermal energy through the movement of carriers, including electrons or holes. Power generation and refrigeration devices made of thermoelectric materials have the advantages of small size, no pollution, no noise, no wear, good reliability, and long life. In the civilian field, the potential application range: household refrigerators, freezers, superconducting electronic device cooling and waste heat power generation, waste heat utilizati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 崔教林
Owner NINGBO UNIVERSITY OF TECHNOLOGY