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A kind of preparation method of ultra-thin zinc oxide nanosheet electrode

The technology of zinc oxide nanometer and zinc oxide nanowire is applied in the field of ultra-thin zinc oxide nanosheet electrode and its preparation, which can solve the problems of long reaction time, cumbersome preparation process, etc., and achieves reduction of cost and energy consumption, and easy availability of preparation conditions. , the effect of increasing the active site

Active Publication Date: 2020-02-07
GUANGZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Firstly, the sample obtained is a powder sample, and secondly, the preparation process is cumbersome, and some polymers and complexing agents need to be added to assist in the formation of the nanosheet structure, and the reaction takes a long time

Method used

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  • A kind of preparation method of ultra-thin zinc oxide nanosheet electrode
  • A kind of preparation method of ultra-thin zinc oxide nanosheet electrode
  • A kind of preparation method of ultra-thin zinc oxide nanosheet electrode

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Experimental program
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Effect test

Embodiment 1

[0040] (1) Substrate preparation

[0041] Cut the Ti slices into small pieces of 1.5×2.5cm, firstly soak them in detergent, and then put them into an ultrasonic cleaner for cleaning for 0.5h (ultrasonic power is p≥0.35w / cm 2 ), to remove the impurities left in the industrial preparation process; 2 Blow dry and set aside. The early cleaning of the metal Ti sheet can improve the wettability of the surface, which is conducive to the uniform distribution of the seed layer on the surface of the Ti sheet. If the cleaning is not thorough, the remaining impurities on the Ti surface will affect the quality of the seed layer film formation;

[0042] (2) Preparation of ZnO seed layer

[0043] The ZnO seed layer was prepared by spin coating method. First select zinc acetate as the solute, ultrapure water as the solvent, and polyvinyl alcohol as the adhesive, wherein 0.25 g of the zinc acetate and 0.25 g of the polyvinyl alcohol are weighed, and they are dissolved in 30 mL of secondary w...

Embodiment 2

[0050] (1) Substrate preparation

[0051] Cut the Ti slices into small pieces of 1.5×2.5cm, firstly soak them in detergent, and then put them into an ultrasonic cleaner for cleaning for 0.5h (ultrasonic power is p≥0.35w / cm 2 ), to remove the impurities left in the industrial preparation process; 2 Blow dry and set aside. The early cleaning of the metal Ti sheet can improve the wettability of the surface, which is conducive to the uniform distribution of the seed layer on the surface of the Ti sheet. If the cleaning is not thorough, the remaining impurities on the Ti surface will affect the film quality of the seed layer.

[0052] (2) Preparation of ZnO seed layer

[0053] The ZnO seed layer was prepared by spin coating method. First select zinc acetate as the solute, ultrapure water as the solvent, and polyvinyl alcohol as the adhesive, wherein 2.5 g of zinc acetate and 0.25 g of polyvinyl alcohol are weighed, and they are dissolved in 300 mL of secondary water successivel...

Embodiment 3

[0059] (1) Substrate preparation

[0060] Cut the Ti sheet into small pieces of 1.5×2.5cm, firstly soak it in detergent, and then put it into an ultrasonic cleaner for cleaning for 1h (the power of the ultrasonic wave is p≥0.35w / cm 2 ), remove the impurities left in the industrial preparation process; then use acetone, absolute ethanol, ultrapure water to ultrasonically clean for 10min, 2 Blow dry and set aside. The early cleaning of the metal Ti sheet can improve the wettability of the surface, which is conducive to the uniform distribution of the seed layer on the surface of the Ti sheet. If the cleaning is not thorough, the remaining impurities on the Ti surface will affect the film quality of the seed layer.

[0061] (2) Preparation of ZnO seed layer

[0062] The ZnO seed layer was prepared by spin coating method. First select zinc acetate as the solute, ultrapure water as the solvent, and polyvinyl alcohol as the adhesive, wherein 2.5 g of zinc acetate and 0.25 g of p...

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Abstract

The invention belongs to the technical field of preparation of semiconductor nanomaterials and discloses an ultrathin zinc oxide nanosheet electrode and a preparation method of the ultrathin zinc oxide nanosheet electrode. The method mainly comprises the following steps: preparing a zinc oxide nanowire through a low-temperature hydrothermal method, putting the zinc oxide nanowire and sodium hypophosphite into a tube furnace, raising the temperature to decompose sodium hypophosphite to produce hydrogen phosphide gas, further preparing an ultrathin zinc oxide nanosheet through the gas phase conversion of the zinc oxide nanowire. The preparation condition of the method is easy to achieve, the operation is simple, the whole preparation process is finished within a relatively short period of time, no special compound is introduced as a complexing agent in the preparation process, the cost and the energy consumption in the actual production process are reduced, the prepared zinc oxide nanosheet is evenly distributed and densely arranged, the preparation method is a low-cost method for preparing the large-area ZnO ultrathin zinc oxide nanosheet electrode, the photoelectric conversion efficiency is effectively improved, and meanwhile, the preparation method is of great significance in popularizing the application of the zinc oxide in the field of energy environment.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanomaterial preparation, and in particular relates to an ultrathin zinc oxide nanosheet electrode and a preparation method thereof. Background technique [0002] Among the numerous metal oxide nano-semiconductor materials, ZnO nano-materials have a wide energy band. At room temperature, its band gap is about 3.37eV, and light scattering hardly occurs under illumination. The nanostructured ZnO material has the advantages of small size, large specific surface area, large contact area, strong adsorption capacity, and more reactive sites on the surface, so that it can be well applied in many aspects, such as optoelectronics , luminescence, catalysis, sensors, field emission, piezoelectric and other fields. As a common semiconductor material, zinc oxide materials have been synthesized in large quantities through various experimental methods and means. Zinc oxide materials with different shapes ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02B82Y40/00
CPCC01G9/02C01P2002/72C01P2004/03C01P2004/20C01P2004/50C01P2004/62C01P2004/64
Inventor 秦冬冬段世芳耿园园张平刘文峰邓湘舟
Owner GUANGZHOU UNIVERSITY