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One-time programmable non-volatile memory and its read sensing method

A non-volatile, one-time technology, applied in static memory, read-only memory, information storage, etc., can solve the problem that the storage state of OTP storage unit can no longer be changed

Active Publication Date: 2020-09-22
EMEMORY TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] As we all know, the OTP storage unit of the one-time programmable (OTP) non-volatile memory determines the storage state of the OTP storage unit after the one-time programmable operation, and the storage status of the OTP storage unit cannot be changed.

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  • One-time programmable non-volatile memory and its read sensing method
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  • One-time programmable non-volatile memory and its read sensing method

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Embodiment Construction

[0038] Please refer to Figure 2A and Figure 2B , which is a schematic diagram of various OTP storage units constituting the one-time programmable non-volatile memory of the present invention.

[0039] like Figure 2A As shown, the OTP non-volatile memory is composed of 2×2 OTP memory cells C11, C12, C21, and C22 to form a memory array (memory array). Wherein, each OTP storage unit C11, C12, C21, C22 is composed of three electronic components. Certainly, the number of the memory cell array of the present invention can be changed to a memory array of M×N size according to actual needs, that is, M word lines and N bit lines, and M and N are positive integers.

[0040] exist Figure 2A Among them, the OTP storage cells C11 and C21 are unprogrammed (non-programmed) OTP storage cells; the OTP storage cells C12 and C22 are programmed (programmed) OTP storage cells.

[0041] Take the unprogrammed OTP memory cell C11 as an example for illustration. The unprogrammed OTP memory c...

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Abstract

A reading sensing method for a one-time programmable non-volatile memory. The one-time programmable non-volatile memory has a memory array connected to a plurality of bit lines. The read sensing method includes the following steps: determining a selected memory cell in the memory array, wherein one of the bit lines is defined as a selected bit line, and the selected bit line is connected to the selected memory cell , other bit lines are defined as non-selected bit lines; precharge the non-selected bit lines to a precharge voltage; connect the selected bit lines to a data line, and discharge the data line to a reset voltage, where The precharge voltage is greater than the reset voltage; receiving a memory cell current output by the selected memory cell, causing a voltage level on the data line to change from the reset voltage; and at least comparing the voltage level on the data line. The voltage level is combined with a comparison voltage to generate an output signal.

Description

technical field [0001] The present invention relates to a non-volatile memory and its read-sensing method, and in particular to a one-time programmable (OTP) non-volatile memory and its read-sensing method. method. Background technique [0002] As is well known, the storage status of the OTP storage unit is determined after the OTP storage unit of the one-time programmable (OTP) non-volatile memory performs the one-time programming operation, and the storage status of the OTP storage unit cannot be changed. [0003] Basically, the OTP memory cells can be divided into fuse OTP memory cells and anti-fuse OTP memory cells. [0004] For example, when the anti-fuse type OTP memory cell is not programmed, it is in a storage state of high impedance (highimpedance); conversely, when the anti-fuse type OTP memory cell is programmed, it is a low impedance ( lowimpedance). In addition, when the fuse-type OTP memory cell is not programmed, it is in a low-impedance storage state; conv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C17/16G11C17/18
CPCG11C17/16G11C17/18
Inventor 陈勇叡
Owner EMEMORY TECH INC