Method and device for power down protection based on NAND flash

A power-down protection and data storage technology, applied in the field of memory, can solve problems such as LSB page read errors, and achieve the effect of reducing the probability of errors

Active Publication Date: 2018-10-02
GIGADEVICE SEMICON (BEIJING) INC
View PDF11 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Embodiments of the present invention provide a power-down protection method and device based on

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for power down protection based on NAND flash
  • Method and device for power down protection based on NAND flash

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] figure 1 The flow chart of the power-down protection method based on NAND flash provided by Embodiment 1 of the present invention. This embodiment is applicable to the situation where the MSB page is powered off during the writing process to avoid reading errors on the LSB page. This method can be implemented by the present invention The power-down protection device based on NAND flash provided by the example provides for execution, and the device can be implemented in the form of software and / or hardware. The method of Embodiment 1 of the present invention specifically includes:

[0027] S110. Before executing the first write action of the write command to the MLC block, determine whether the current data page to be written is an MSB page, and if so, perform step S120.

[0028] In the present embodiment, the EMMC device of built-in NAND flash, NAND flash comprises MLC (Multi-LevelCell, multi-layer storage unit) block and SLC (Single-Level Cell, single-level storage uni...

Embodiment 2

[0047] figure 2 A schematic structural diagram of a NAND flash-based power-down protection device provided in Embodiment 2 of the present invention. The NAND flash includes an MLC block and an SLC block. The data pages of the MLC block include an MSB page and a corresponding LSB page. The device is suitable for implementing this In the NAND flash-based power-down protection method provided in Embodiment 1 of the invention, the device may specifically include:

[0048] The first judging module 210 is used to judge whether the current data page to be written is an MSB page before executing the first write action of the write command to the MLC block;

[0049] The first backup module 220 is used for backing up the data of the LSB page corresponding to the current data page to be written into the SLC block when the first judging module judges that the current data page to be written is an MSB page;

[0050] The second judging module 230 is used to judge whether the last page wri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Embodiments of the invention disclose a method for power down protection based on NAND flash. The NAND flash comprises a MLC block and a SLC block. A data page of the MLC block comprises a MSB page and a LSB page corresponding to the MSB page. The method comprises: before executing first writing operation of a writing command on the MLC block, determining whether a current to-be-written data pageis the MSB page; when the current to-be-written data page is the MSB page is determined, backing up the LSB page corresponding to the current to-be-written data page in the SLC block; after executinglast writing operation of the writing command on the MLC block, determining whether the written-in last page is the MSB page; when the written-in last page is determined to be the MSB page, backing updata of the LSB page corresponding to the written-in last page in the SLC block. The method solves a problem of LSB page read errors caused by power down of the MSB page, realizes to ensure LSB datanot to be damaged, and reduces error probability in a data storage process.

Description

technical field [0001] Embodiments of the present invention relate to memory technologies, and in particular to a NAND flash-based power-down protection method and device. Background technique [0002] EMMC (Embedded Multi Media Card) is an embedded multimedia card. It is an embedded memory standard specification established by the MMC Association, mainly for products such as mobile phones or tablet computers. EMMC integrates a controller in the package, which provides a standard interface and manages the flash memory, allowing handset manufacturers to focus on other parts of product development and shorten the time to market. NAND flash is a kind of Flash memory, which is a non-volatile storage device. [0003] For EMMC products based on NAND flash, there are two types of data blocks in the NAND flash, one is MLC (multi-level cell, multi-layer cell), and the other is SLC (single-level cell, single-layer cell) . Among them, the MLC block contains multiple MSB (Most signif...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F11/14
CPCG06F11/1448G06F11/1458
Inventor 陈诚
Owner GIGADEVICE SEMICON (BEIJING) INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap