A kind of pulse power source and semiconductor device

Abstract

The present invention provides a pulsed power source and a semiconductor device, wherein an existing radio frequency (RF) pulsed power supply is replaced by a continuous wave power source, and a continuous wave power signal outputted by the continuous wave power source is allowed to pass through a matcher first, which allows a continuous voltage and current signal to be detected by an impedance detection device in the matcher, thereby avoiding the problem of impedance mismatch. Then, the matched continuous wave power signal is decomposed into at least two signals by a power divider. One of thesignals is phase-shifted by a phase shifter and then superimposed with the remaining signals to obtain a RF pulse signal. In this way, the RF pulse signal can be generated and pulsed RF energy can beused in the process to reduce plasma-induced damage. The impedance matching can also be guaranteed, thus the stability of the matching device can be improved, so as to further improve the impedance stability of a reaction chamber. Especially in the case of low duty cycle and high pulse frequencies, the effect of improving the stability of the matcher is more significant.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment manufacturing, in particular to a pulse power source and semiconductor equipment. Background technique [0002] In semiconductor coating and etching equipment, the RF energy provided by the RF power supply is usually transmitted into the chamber to ionize the gas in a high vacuum state (such as argon, helium, nitrogen, hydrogen, etc.) to generate a large amount of electrons Plasma of active particles such as ions, atoms, molecules and free radicals in the excited state, complex interactions between these active particles and the wafer placed in the cavity and exposed to the plasma environment, make the surface of the wafer material Various physical and chemical reactions occur, thereby changing the surface properties of the material, and completing the coating and etching process of the wafer. [0003] Because the pulsed plasma technology can reduce the plasma-induced damage (Plas...

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Problems solved by technology

[0005] Since the radio frequency pulse power supply 9 generates discontinuous pulse signals, the impedance detection device in the matching device 8 determines the impedance by collecting voltage and current signals, and the voltage and current signals are continuous signals, so the impedance detected by the anti-detection device cannot keep up The change of the pulse signal will cause the mismatch of the matcher 8, and then stop the whole process, especially in the case of low duty cycle and high pulse frequency, the mismatch of the matcher 8 will be more obvious

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