36results about How to "Avoid Impedance Mismatches" patented technology

Disclosed are an apparatus and method for testing performance of a mobile station having a global positioning system (GPS) mounted therein. The method provides for virtually changing parameters requited for a registration at a base station so that the mobile station excludes the registration and directly enters a test state with an idle mode, and testing the performance of the mobile station in the idle mode test state. Accordingly, no re-boot is necessary to register with the base station upon completion of the test.

The invention discloses a low-temperature reading method of a superconducting nanowire single-photon detector. The method involves a high input impedance amplification circuit at low temperature, a device base and a bias plate, wherein the high input impedance amplification circuit enters a room temperature environment through a coaxial line; the superconducting nanowire single-photon detector atlow temperature is connected with the bias plate through a bonding line; the bias plate is connected to a current source in the room temperature environment through a pin header and a direct current line; the superconducting nanowire single-photon detector is placed on the device base; and an output end of the superconducting nanowire single-photon detector is connected to an input end of the highinput impedance amplification circuit through the bonding line. The method solves the problems of weak detection signals of the superconducting nanowire single-photon detector, impedance mismatch andenergy loss caused by the traditional 50 omega room temperature reading method, effectively improves the pulse amplitude and the signal-to-noise ratio of output signals of the device, and particularly realizes photon number resolution for a serial SNSPD device.

The invention discloses a method for testing dynamic indentation of a material. The method is characterized by comprising the following steps of: fixedly arranging a tested piece on the end face of one end, which faces a transmission bar, of an incident bar, and fixedly arranging a tested piece on the end face of one end, which faces the incident bar, of the transmission bar; sticking a first strain gauge to the incident bar; sticking a second strain gauge to the transmission bar; electrically connecting the first strain gauge and the second strain gauge with an ultra-dynamic strain indicator respectively; striking the incident bar by using a striking bar to ensure that the two test pieces and a stress ball extrude one other to form indentations; and processing the indentations to obtain a time travel curve of press-in force and press-in displacement of the tested pieces. The method has the advantages that the dynamic mechanical performances of the material are measured by using an experimental method, the phenomenon of impedance mismatch of the connecting part of a pressure head and a pressure bar in the prior art is avoided, and the problem that part of the connecting part of the incident bar and the pressure bar generates plastic deformation during dynamic loading in the prior art is solved, so that the measurement accuracy of the method is high, and the maximum indenting velocity can be higher than 30 m/s.

The invention belongs to the technical field of ultrasonic cleaning, in particular to a double-tank ultrasonic cleaner based on a bidirectional ultrasonic radiation recombination transducer. The double-tank ultrasonic cleaner comprises a bidirectional radiation transducer, wherein a front radiation surface and a rear radiation surface of the bidirectional radiation transducer are bonded with a first cleaning tank and a second cleaning tank respectively, and the bidirectional radiation transducer comprises piezoelectric chips, front metal tapered radiation blocks and rear metal tapered radiation blocks. By changing the front and rear metal radiation materials of the bidirectional radiation transducer, different sound radiation power can be generated in the two cleaning tanks of ultrasonic cleaner; by changing the geometric shapes of the front and rear metal radiation materials of the bidirectional radiation transducer, ultrasonic radiation of different strength can be generated; and with the additional design of the bidirectional radiation transducer, the problems of ultrasonic reflection and impedance mismatching are solved, and the radiation efficiency and power of the bidirectional radiation transducer are improved and increased greatly. The double-tank ultrasonic cleaner has the advantages of low energy dissipation, and high radiation power and radiation efficiency, and deserves to be popularized and applied.

The invention relates to a combined through-hole construction of printed circuit board, which can be applied to a first, and a second signal line, and a printed circuit board of multi-substrate. The combined through-hole construction includes a first and a second through-hole corresponding to the first and the second signal lines through the multi-substrate spaced by a predetermined distance, and a insulation region corresponding to rim of the first through-hole and the second through-hole. The insulation region includes at least a region extending a first safe distance from the outer edge of the first through-hole, a region extending a second safe distance from the outer edge of the second through-hole, and a region between the first through-hole and the second through-hole. Therefore, unmatched resistance and electromagnetic interference caused by wiring between the first and the second through-holes in prior art is avoided by the insulation region.

A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 mum and not more than 60 mum.

The invention provides a power division and combination device, a feed network and an electrically tunable antenna. The power dividing combiner comprises a power division circuit and a combination circuit, wherein the power division circuit comprises a power division circuit main body and a plurality of power division circuit branches, the power division circuit main body comprises two ends, and each power division circuit branch is connected with the first end of the power division circuit main body; the combination circuit comprises two combination circuit branches, and each combination circuit branch is connected with the second end of the power division circuit main body; the two combination circuit branches are respectively corresponding to different frequency bands; and each combination circuit branch is formed by connecting a plurality of microstrip lines with different widths. According to the power division and combination device, the feed network and the electrically tunable antenna provided by the invention, when the signal is transmitted through the branch circuits of the combination circuit, impedance matching is performed on the signal and each microstrip line in the branch circuit of the combination circuit, and the impedance of the power division and combination device is kept within the deviation range of standard impedance, so that the phenomenon of impedance mismatching can be avoided, the fluctuation of the standing-wave ratio in the branch circuits of the combination circuit can be reduced, and the stability of signal transmission can be improved.

A semiconductor package substrate including a substrate body having a front surface configured for mounting a semiconductor chip on the front surface and a rear surface facing the front surface and comprising a window passing through the front and rear surfaces, the window having one or more surfaces inclined from the front surface toward the rear surface; and a conductive pattern arranged along an inclined surface of the window so as to extend from the front surface to the rear surface of the substrate body.

An inner conductor terminal (10) is made of a metal plate and includes tubular first terminal portion (11) and second terminal portion (12) each having an opening end. A bent portion (15) links the first and second terminal portions (11, 12) and covers the respective opening ends of the first and second terminal portions (11, 12) by facing the openings. A tab (13) projects from an end of the first terminal portion (11) opposite to the opening end, and a lead (14) projects from an end part of the second terminal portion (12) opposite from the opening end. The inner conductor terminal (10) includes two side panels (16) projecting from the second terminal portion (12) to be located at both sides of the bent portion (15) and covering a clearance between the bent portion (15), the first terminal portion (11) and the second terminal portion (12) from both sides.

The invention relates to a seal structure of chip of bridging-typed and its manufacture method, at last including a substrate, a chip and at least a conductor; the substrate has a first surface and its corresponding second surface, a depressed section and at least a contact of substrate, whose contact is on the first surface of substrate. The chip has a active surface and at least a contact of substrate which is on the active surface of chip. The chip is in the depressed section of substrate, whose at least one sidewall is near the depressed section, the active surface of chip and the first plane of substrate are installed for the public plane. Conductor is extending on the active surface of chip and the first plane on substrate, linking the contact of chip to that of substrate. The invention can shorten the distance between chip and substrate, increasing the electrical property efficiency of chip structure, which is more suitable for practical use and has use value in industry.

The present invention provides a coaxial connector that realizes a high frequency signal flowing through a contact in a high frequency band. A coaxial connector includes a three-point contact, a housing including a first and a second connection base, and a shell including a cylindrical portion accommodating the first connection base and an extension portion covering one opening of the cylindrical portion with a bottom plate piece and accommodating the second connection base. The bottom plate piece includes an inclined surface having a higher side on the base end portion of the metal plate and a lower side on the tip end side of the metal plate. The distance between the metal plate of the contact and the bottom surface of the shell which are isolated by an insulating material of the housing is configured to become identical between the tip end side and the base end side of the contact.