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A diode-pumped Raman fiber laser and its spectral synthesis method

A diode laser and fiber laser technology, applied in the field of lasers, can solve the problems of nonlinear effects and mode instability, the number of sub-beams cannot be expanded indefinitely, etc., and achieves no degradation of beam quality, favorable optical path arrangement, and wide working range. Effect

Active Publication Date: 2021-02-09
INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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Problems solved by technology

However, limited by the limited ytterbium-doped fiber gain spectral width (1040nm-1090nm) and the angular resolution of the beam-forming grating, the number of sub-beams for spectral synthesis cannot be expanded indefinitely. The requirements also pose a difficult challenge to the development of fiber laser beamlets (the main technical difficulties of high-power narrow-linewidth fiber beamlets focus on nonlinear effects and mode instability suppression)

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  • A diode-pumped Raman fiber laser and its spectral synthesis method
  • A diode-pumped Raman fiber laser and its spectral synthesis method
  • A diode-pumped Raman fiber laser and its spectral synthesis method

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Embodiment

[0029] exist Figure 1Among them, the diode laser 1 is a high-brightness 9xxnm (such as 915nm) pump module packaged by a single tube or a combination of bars, and its output power is on the order of hundreds of watts to kilowatts. After the pump light generated by 1 is shaped and narrowed by the fiber coupling optical system 2 , it is focused and coupled into the core of the graded-index fiber 3 . After production and finalization, the optical coupling system 2 can be optimized into a micro-element, adjusted by a precision mechanism and bonded and fixed. Graded-index fiber 3 can be a commercial fiber with a length of 500m or 1km, such as Throlabs MM GIF625 (core / cladding diameter 62.5μm / 125μm, NA 0.275). Without thermal damage to the end face, the power density of the fiber end face can be reduced by coating the end face of the coupling fiber or welding a section of quartz rod on the end face. After the coupling ends of components 1, 2 and 3 in the laser are adjusted, they c...

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Abstract

The present invention provides a diode directly pumped Raman fiber laser and its spectral synthesis method. The scheme adopts a 9xxnm diode directly pumped Raman fiber laser as a new synthetic sub-beam, and expands the synthetic spectral width of the spectral synthesis to 900nm- 1030nm band, and then greatly expand the number of spectral synthesis sub-beams, with the development of diode directly pumped Raman fiber laser technology, and finally further effectively increase the output power of spectral synthesis. At the same time, the present invention can also be regarded as a beneficial improvement to the original diode laser spectrum synthesis technology. Through the beam purification effect of the Raman effect, the original diode laser with poor beam quality is converted into an ideal beam that can be synthesized. Combined efficiency and beam quality are improved.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a diode directly pumped Raman fiber laser and a spectrum synthesis method thereof. Background technique [0002] Spectral synthesis is the use of dispersion gratings to diffract multiple laser sub-beams of different wavelengths to the same aperture output, while maintaining good beam quality while increasing power, it is one of the effective technical ways to achieve efficient and high-quality laser beam combination. In the currently reported spectral synthesis systems based on diode lasers or solid-state lasers, the beam quality and synthesis efficiency of the synthesized beams are not ideal due to the poor beam quality of the sub-beams themselves. [0003] Thanks to the excellent beam quality and high conversion efficiency of fiber lasers, fiber laser-based spectral synthesis has developed rapidly in recent years, especially in the 1μm band based on ytterbium-doped silicon-based...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/067H01S3/0941H01S3/30
CPCH01S3/0675H01S3/0941H01S3/302
Inventor 李腾龙彭万敬杜维川马毅孙殷宏
Owner INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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