Supercharge Your Innovation With Domain-Expert AI Agents!

Data recovery method and system used for flash memory

A recovery method and data technology, which is applied to data error detection, electrical digital data processing, and response error generation in the direction of redundancy in computing, and can solve problems such as data failure to pass ECC verification

Active Publication Date: 2018-10-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The read voltage provided by the NAND flash memory manufacturer is not the best read voltage for data re-read operation, and it is very likely that the read data cannot pass the ECC check

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data recovery method and system used for flash memory
  • Data recovery method and system used for flash memory
  • Data recovery method and system used for flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0047] like Figure 4 As shown, it is a flow chart of Embodiment 1 of a data recovery method for flash memory disclosed in this application. This method may include the following steps:

[0048] S101. When the flash memory receives the read command, read the original data based on the default read voltage;

[0049] When the flash memory data needs to be restored, firstly, a read command for reading the flash memory data is received, and after the read command is received, the origi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The application discloses a data recovery method and system used for a flash memory. The method includes: reading original data on the basis of default reading voltage when the flash memory receives areading command; carrying out ECC (Error Correcting Code) checking on the original data, and judging whether a first error number is greater than maximum ECC error-correction capability; when the first error number is greater than the maximum ECC error-correction capability, determining rereading voltage by rereading error-correction, carrying out ECC checking on data read by the rereading voltage, and judging whether a second error number is greater than the maximum ECC error-correction capability; and when the second error number is greater than the maximum ECC error-correction capability,carrying out compensation on threshold voltage of a storage unit, and obtaining optimal reading voltage by rereading error-correction until a third error number after ECC checking on data read by theoptimum reading voltage is less than or equal to the maximum ECC error-correction capability. The method is capable of recovering flash memory data by combining data rereading and compensation, and effectively reduces an original bit error rate as compared with the prior art.

Description

technical field [0001] The technical field of data processing of the present application, in particular, relates to a data recovery method and system for flash memory. Background technique [0002] Data retention is an important feature that affects the reliability of NAND flash memory data storage. After a period of time, the distribution of data stored in the storage array will shift to the left, such as figure 1 As shown, the reason for the left shift of the distribution state is that the charge stored in the charge storage layer is lost. After the distribution state shifts to the left, if the original read voltage R0, R1, R2 is still used to read the data stored in the array, there will be If the bit error rate is high, it is very likely that the ECC (Error Correcting Code, error correction control code) check cannot be passed, and the correct stored data cannot be obtained. [0003] Data rereading is one of the effective methods to solve the left shift of NAND flash da...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/14G06F11/10
CPCG06F11/1012G06F11/1068G06F11/1471
Inventor 王颀李前辉门顶顶霍宗亮叶甜春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com