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A data recovery method and system for flash memory

A technology of data and flash memory, which is applied in the field of data recovery method and system of flash memory, and can solve problems such as data failing to pass ECC verification

Active Publication Date: 2020-09-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The read voltage provided by the NAND flash memory manufacturer is not the best read voltage for data re-read operation, and it is very likely that the read data cannot pass the ECC check

Method used

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  • A data recovery method and system for flash memory
  • A data recovery method and system for flash memory
  • A data recovery method and system for flash memory

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Embodiment Construction

[0046] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0047] Such as Figure 4 As shown, it is a flow chart of Embodiment 1 of a data recovery method for flash memory disclosed in this application. This method may include the following steps:

[0048] S101. When the flash memory receives the read command, read the original data based on the default read voltage;

[0049] When the flash memory data needs to be restored, firstly, a read command for reading the flash memory data is received, and after the read command is received, the or...

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Abstract

The application discloses a data recovery method and system used for a flash memory. The method includes: reading original data on the basis of default reading voltage when the flash memory receives areading command; carrying out ECC (Error Correcting Code) checking on the original data, and judging whether a first error number is greater than maximum ECC error-correction capability; when the first error number is greater than the maximum ECC error-correction capability, determining rereading voltage by rereading error-correction, carrying out ECC checking on data read by the rereading voltage, and judging whether a second error number is greater than the maximum ECC error-correction capability; and when the second error number is greater than the maximum ECC error-correction capability,carrying out compensation on threshold voltage of a storage unit, and obtaining optimal reading voltage by rereading error-correction until a third error number after ECC checking on data read by theoptimum reading voltage is less than or equal to the maximum ECC error-correction capability. The method is capable of recovering flash memory data by combining data rereading and compensation, and effectively reduces an original bit error rate as compared with the prior art.

Description

technical field [0001] The technical field of data processing of the present application, in particular, relates to a data recovery method and system for flash memory. Background technique [0002] Data retention is an important feature that affects the reliability of NAND flash memory data storage. After a period of time, the distribution of data stored in the storage array will shift to the left, such as figure 1 As shown, the reason for the left shift of the distribution state is that the charge stored in the charge storage layer is lost. After the distribution state shifts to the left, if the original read voltage R0, R1, R2 is still used to read the data stored in the array, there will be If the bit error rate is high, it is very likely that the ECC (Error Correcting Code, error correction control code) check cannot be passed, and the correct stored data cannot be obtained. [0003] Data rereading is one of the effective methods to solve the left shift of NAND flash da...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/14G06F11/10
CPCG06F11/1012G06F11/1068G06F11/1471
Inventor 王颀李前辉门顶顶霍宗亮叶甜春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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