Unlock instant, AI-driven research and patent intelligence for your innovation.

Power switch and its semiconductor device

A technology of power switches and semiconductors, applied in the field of power switches and their semiconductor devices, to achieve the effects of avoiding burnout, reducing chip area, and averaging impedance

Active Publication Date: 2021-09-28
UPI SEMICON CORP
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention provides a power switch and its semiconductor device to solve the problems mentioned in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Power switch and its semiconductor device
  • Power switch and its semiconductor device
  • Power switch and its semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0056] Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. In addition, elements / members with the same or similar numbers used in the drawings and embodiments are used to represent the same or similar parts. In the following embodiments, when an element is referred to as being "connected" or "coupled" to another element, it may be directly connected or coupled to another element, or there may be intervening elements or specific materials. (Example: glue or solder).

[0057] A preferred embodiment of the present invention is a power switch. In this embodiment, the power switch may be an N-type metal oxide semiconductor field effect transistor (N-MOSFET) power switch or a P-type metal oxide semiconductor field effect transistor (P-MOSFET) power switch, but not limited thereto. .

[0058] Please refer to Figure 5 , Figure 5 It is a schematic diagram of the circuit layout...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a power switch and a semiconductor device thereof. The power switch includes a first transistor unit cell, a second transistor unit cell, a base region and a conductive layer. The first transistor cell includes a first electrode. The second transistor cell includes a second electrode. The base region is located between the first transistor unit cell and the second transistor unit cell. The conductive layer is electrically connected to the base region, the first electrode and the second electrode respectively. The invention can reduce the area of ​​the chip and avoid the burning of the high impedance area.

Description

technical field [0001] The invention relates to a power switch, in particular to a power switch and a semiconductor device thereof. Background technique [0002] figure 1 It is a schematic diagram of an existing N-type metal oxide semiconductor field effect transistor (N-MOSFET) power switch. Since its base B is grounded, it will have a large on-resistance (Ron). Therefore, if figure 2 As shown, in practice, the base B of the N-type MOSFET power switch can be coupled to the source S to reduce its on-resistance. [0003] However, when figure 2 When the power switch of the N-type metal-oxide-semiconductor field effect transistor is turned off, its body diode BD will still maintain unidirectional conduction, which will cause the current to flow back from the voltage Vout of the source S to the voltage VH of the drain D. Therefore, if image 3 As shown, in practice, the bulk metal oxide half field effect transistor (Bulk MOSFET) between the base B and the drain D can als...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L29/06H01L29/78
CPCH01L27/0207H01L29/0684H01L29/78H03K2217/0018H01L21/823493H01L27/088H03K17/6871H01L29/36
Inventor 吴佳龙
Owner UPI SEMICON CORP