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Power switch and semiconductor device thereof

A power switch and semiconductor technology, applied in the field of power switches and their semiconductor devices, achieves the effects of avoiding burnout, averaging impedance and reducing chip area

Active Publication Date: 2018-11-02
UPI SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the present invention provides a power switch and its semiconductor device to solve the problems mentioned in the prior art

Method used

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  • Power switch and semiconductor device thereof
  • Power switch and semiconductor device thereof
  • Power switch and semiconductor device thereof

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Embodiment Construction

[0056] Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. In addition, elements / members with the same or similar numbers used in the drawings and embodiments are used to represent the same or similar parts. In the following embodiments, when an element is referred to as being "connected" or "coupled" to another element, it may be directly connected or coupled to another element, or there may be intervening elements or specific materials. (Example: glue or solder).

[0057] A preferred embodiment of the present invention is a power switch. In this embodiment, the power switch may be an N-type metal oxide semiconductor field effect transistor (N-MOSFET) power switch or a P-type metal oxide semiconductor field effect transistor (P-MOSFET) power switch, but not limited thereto. .

[0058] Please refer to Figure 5 , Figure 5 It is a schematic diagram of the circuit layout...

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Abstract

A power switch and a semiconductor device thereof are disclosed. The power switch device includes a first transistor cell, a second transistor cell, a body region and a conductive layer. The first transistor cell includes a first electrode. The second transistor cell includes a second electrode. The body region is disposed between the first transistor cell and the second transistor cell. The conductive layer is electrically connected with the body region, the first electrode and the second electrode respectively.

Description

technical field [0001] The invention relates to a power switch, in particular to a power switch and a semiconductor device thereof. Background technique [0002] figure 1 It is a schematic diagram of an existing N-type metal oxide semiconductor field effect transistor (N-MOSFET) power switch. Since its base B is grounded, it will have a large on-resistance (Ron). Therefore, if figure 2 As shown, in practice, the base B of the N-type MOSFET power switch can be coupled to the source S to reduce its on-resistance. [0003] However, when figure 2 When the power switch of the N-type metal-oxide-semiconductor field effect transistor is turned off, its body diode BD will still maintain unidirectional conduction, which will cause the current to flow back from the voltage Vout of the source S to the voltage VH of the drain D. Therefore, if image 3 As shown, in practice, the bulk metal oxide half field effect transistor (Bulk MOSFET) between the base B and the drain D can als...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L29/06H01L29/78
CPCH01L27/0207H01L29/0684H01L29/78H03K2217/0018H01L21/823493H01L27/088H03K17/6871H01L29/36
Inventor 吴佳龙
Owner UPI SEMICON CORP