Method for increasing testing safety of high-power semiconductor amplifier

A semiconductor, high-power technology, applied in the field of improving the testing safety of high-power semiconductor amplifier devices, can solve the problems of burning the instrument, not connecting the band-stop filter, etc., to achieve the effect of ensuring safety

Active Publication Date: 2018-11-13
CHINA ELECTRONIS TECH INSTR CO LTD
View PDF10 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] In order to solve the above-mentioned technical problems, the present invention proposes a method for improving the test safety of high-power semiconductor amplifiers, which solves the problem that during the noise

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for increasing testing safety of high-power semiconductor amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] It should be pointed out that the following detailed description is exemplary and intended to provide further explanation to the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0029] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and / or combinations thereof.

[0030] As introduced in the background technology, when using the traditional test method, it is very likely tha...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for increasing the testing safety of a high-power semiconductor amplifier. During noise power density testing, the method includes the steps of firstly, inputting safety input power PIN-safe from the input port of the high-power semiconductor amplifier; secondly, determining the output power POUT of the high-power semiconductor amplifier, and if the POUT is largerthan an upper limit, determining that an appropriate band-stop filter is not connected to the output port of the high-power semiconductor amplifier or no band-stop filter is connected to the output port of the high-power semiconductor amplifier. By the method, performance index testing during the testing of the high-power semiconductor amplifier, and the burning of precious testing instruments such as a vector network analyzer and a spectrometer.

Description

technical field [0001] The invention relates to the technical field of electronic device testing, in particular to a method for improving the testing safety of high-power semiconductor amplifier devices. technical background [0002] High-power semiconductor amplifiers are mainly used for power amplification of radio frequency microwave signals, and require good linearity indicators and high output power, so they are widely used. The main indicators for evaluating the performance of high-power semiconductor amplifiers are output power, parasitic modulation, gain, AM / PM variation coefficient, phase shift, group delay, noise figure, standing wave ratio, harmonics, power back-off, and noise power density etc. The required test instruments include vector network analyzers, power meters, spectrum analyzers, noise meters and noise sources. [0003] Taking the test of a high-power semiconductor amplifier with two-input and two-output channels as an example, according to the requir...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01R1/36G01R1/28G01R29/26
CPCG01R1/28G01R1/36G01R29/26
Inventor 丁志钊单梅林吴家亮
Owner CHINA ELECTRONIS TECH INSTR CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap