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A kind of preparation method and application of compound stabilized SIC point composite material

A technology of composite materials and complexes, which is applied in the field of nanomaterials, metal-organic complexes and electrochemical detection, can solve the problems of non-negligible cytotoxicity and structural damage of cadmium-based quantum dots, with short time to achieve and good biocompatibility , high chemical stability

Inactive Publication Date: 2020-11-03
SHANDONG JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, many studies have shown that cadmium-based quantum dots are highly cytotoxic. Although a core-shell structure formed after surface treatment can reduce its cytotoxicity to a certain extent, further research by scientists has shown that long-term exposure to excitation light Oxidation and photolysis reactions will occur on the surface of quantum dots, resulting in structural damage and the dissociation of highly toxic cadmium ions. Therefore, the cytotoxicity of cadmium-based quantum dots cannot be ignored.

Method used

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  • A kind of preparation method and application of compound stabilized SIC point composite material
  • A kind of preparation method and application of compound stabilized SIC point composite material
  • A kind of preparation method and application of compound stabilized SIC point composite material

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Experimental program
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Effect test

Embodiment 1

[0043] Embodiment 1 A kind of preparation method of compound stabilized SiC dot composite material

[0044] (1) Preparation of adamantane-based ligand ADM-BP

[0045]Blend 1.8771g amantadine hydrochloride, 2g potassium carbonate and 60mL acetonitrile, add 1.3203g 2,6-bis(chloromethyl)pyridine, stir vigorously; heat to 80°C, react for 24 hours, then cool to room temperature , filtered, washed with acetonitrile and water successively, and dried at 60°C; the obtained solid was dissolved in 20 mL of dichloromethane, and then 15 mL of water was added, shaken sufficiently, allowed to stand, and separated; the obtained organic layer was dried by adding sodium sulfate, Distillation, remove solvent, obtain adamantane amino ligand ADM-BP powder, productive rate is 70%;

[0046] Described amantadine hydrochloride, structural formula is as follows:

[0047]

[0048] Described 2,6-bis(chloromethyl)pyridine, structural formula is as follows:

[0049]

[0050] The structural formula...

Embodiment 2

[0063] Example 2 A preparation method of complex stabilized SiC dot composite material

[0064] (1) Preparation of adamantane-based ligand ADM-BP

[0065] Blend 2.3464g amantadine hydrochloride, 2.5g potassium carbonate and 70mL acetonitrile, add 1.7604g 2,6-bis(chloromethyl)pyridine, stir vigorously; heat to 80°C, react for 24 hours, then cool to Filter at room temperature, wash with acetonitrile and water successively, and dry at 60°C; dissolve the obtained solid in 25 mL of dichloromethane, add 15 mL of water, shake fully, stand still, and separate; add sodium sulfate to the obtained organic layer to dry , distillation, solvent removal, to obtain the adamantane amino ligand ADM-BP powder, the yield is 75%;

[0066] Described amantadine hydrochloride, structural formula is as follows:

[0067]

[0068] Described 2,6-bis(chloromethyl)pyridine, structural formula is as follows:

[0069]

[0070] The structural formula of the adamantyl amino ligand ADM-BP is as follows...

Embodiment 3

[0083] Example 3 A preparation method of complex stabilized SiC dot composite material

[0084] (1) Preparation of adamantane-based ligand ADM-BP

[0085] Blend 2.8157g amantadine hydrochloride, 3g potassium carbonate and 80mL acetonitrile, add 2.2005g 2,6-bis(chloromethyl)pyridine, stir vigorously; heat to 80°C, react for 24 hours, then cool to room temperature , filtered, washed with acetonitrile and water successively, and dried at 60°C; the obtained solid was dissolved in 30 mL of dichloromethane, and then 15 mL of water was added, shaken sufficiently, allowed to stand, and separated; the obtained organic layer was dried by adding sodium sulfate, Distillation, remove solvent, obtain adamantyl amino ligand ADM-BP powder, productive rate is 72%;

[0086] Described amantadine hydrochloride, structural formula is as follows:

[0087]

[0088] Described 2,6-bis(chloromethyl)pyridine, structural formula is as follows:

[0089]

[0090] The structural formula of the adam...

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Abstract

The invention discloses a preparation method and application of a complex stabilized SiC point composite material, and belongs to the technical field of nanomaterials, metal organic complexes and electrochemical detection. In particular, based on the complex stabilized SiC point composite material SiC@Cu(II)-ADM / Cu, a chemical sensor is prepared for detection of ethinyl estradiol. The preparationmethod comprises the following specific steps: (1), preparing an amantadine-based ligand ADM-BP; (2), preparing a complex composite material Cu(II)-ADM / Cu by an electrochemical deposition method; (3),preparing SiC quantum dots; (4), preparing a complex stabilized SiC point composite material SiC@Cu(II)-ADM / Cu electrochemical sensor by an electrochemical deposition method. The Cu(II)-ADM / Cu has alarge specific surface area, more active sites and excellent adsorption performance, so that the prepared chemical sensor has the advantages of high ethinyl estradiol detecting sensitivity, low detection limit, good stability, easiness in operation and the like.

Description

technical field [0001] The invention relates to a preparation method and application of complex-stabilized SiC point composite materials, and belongs to the technical fields of nanometer materials, metal-organic complexes and electrochemical detection. Background technique [0002] Sewage carries a large amount of pollutants, such as estrone, estradiol, estriol, and a large number of toxic, harmful, flammable and explosive gases, which have caused serious damage and pollution to the natural environment of our country. We need to Strengthen the treatment and detection of wastewater. [0003] In the past ten years, semiconductor materials such as Si, Ge, GaAs, GaP, InP, and InAs have had a huge impact on people's lives. However, as people's requirements for technological development continue to increase, traditional semiconductor materials have shown obvious deficiencies, such as inability to withstand high temperatures, low power, and weak radiation. As a new semiconductor ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J31/22B01J37/34G01N27/48C25D9/02C25D9/04C25D15/00B82Y40/00B82Y30/00
CPCB01J31/183B01J35/0033B01J37/348B01J2531/0213B01J2531/0241B01J2531/16B82Y30/00B82Y40/00C25D9/02C25D9/04C25D15/00G01N27/48
Inventor 匡芮魏长宝赵万峰张伟
Owner SHANDONG JIAOTONG UNIV