A Method for Evaluating the Performance of Impatt Diodes with Sic Homostructure

Abstract

The invention provides a method for evaluating the performance of a SiC homogeneous structure impact avalanche transit time (IMPATT) diode, including determining the structure of the IMPATT diode, and constructing the thickness and operating frequency f of the N and P regions of the IMPATT diode d Relationship. On this basis, the Poisson equation, the continuity equation and the current density equation considering the tunneling effect of the homostructure are established to form a system of equations. Obtain the boundary conditions of the IMPATT diode, use the double iterative simulation technology based on the one-dimensional finite difference method to iteratively solve the equations, and calculate the breakdown voltage, avalanche voltage, drift region voltage, DC-AC power conversion efficiency, conductance and susceptance and other performance parameters. In implementing the present invention, the performance of the SiC homogeneous heterogeneous junction mixed tunneling avalanche transit time (MITATT) diode is considered, and the stability can be judged by comparing the performance difference between IMPATT and MITATT diodes.

Description

technical field [0001] The invention relates to the technical field of diode evaluation, in particular to a method for evaluating the performance of silicon carbide (SiC) homogeneous junction impingement avalanche transit time (IMPATT) diodes. Background technique [0002] Electromagnetic waves with a frequency in the range of 0.1THz to 10THz on the electromagnetic spectrum are called terahertz (Terahertz, THz, 1THz=10 12 Hz) wave, which has little attenuation in the atmospheric window. The transit time (TT) diode is widely used, and it is a negative resistance semiconductor device that uses the carrier injection mechanism and the process of the carrier to cross the drift region to cause a phase delay. The IMPATT diode is a TT device using the collisional avalanche injection mechanism, which is the most common terahertz wave source. Millimeter wave, microwave, and terahertz power sources for national defense and civil applications. [0003] SiC is an indirect bandgap mate...

AI Technical Summary

Problems solved by technology

Zheng Junding et al. compared the performance of different SiC homogeneous structure IMPATT and hybrid tunneling avalanche transit time (MITATT) diodes [Zheng Junding et al. Journal of Wenzhou University (Natural Science Edition), 2018,39(1):40- 48.], but the homogeneous structure IMPATT and MITATT diodes composed of different crystal forms of SiC are still rarely reported. Semiconductor Device Physics Textbook [Shi Min (S.M.Sze) (US), Wu Guoyu (US), Semiconductor Device Physics [ M], Xi'an: Xi'an Jiaotong University Press, 2008 (3rd Edition)] also did not mention SiC homogeneous structure IMPATT, MITATT diodes

[0006] In summary, the inventors found that the original method had great limitations, and did not consider the influence of tunneling effect on the performance of IMPATT diodes with different SiC structures, which made the accuracy of the evaluation results not high.

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