A kind of lateral structure impatt diode and preparation method thereof
A lateral structure, diode technology, applied in diodes, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems that restrict the performance of traditional vertical structure IMPATT, difficult metal-P-type GaN barrier height, and difficult to form high-quality P-type ohmic contact and other problems, to achieve the effect of enhancing low field mobility, significant negative differential mobility effect, and reducing device size
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[0041] The present invention will be described in further detail below in conjunction with specific examples, but not as a limitation of the present invention.
[0042] refer to figure 2 , the lateral structure IMPATT diode of the present invention comprises a substrate layer 1, an epitaxial layer 2, a drift layer 3, an n-AlGaN barrier layer 4, an n+-GaN barrier layer 5, a right ohmic contact layer 6, a left ohmic contact layer 7, a left Ohmic contact electrode 8 , right ohmic contact electrode 9 , passivation layer 10 , Schottky contact electrode 11 .
[0043] The epitaxial layer 2 is located on the upper layer of the substrate layer 1; the drift layer 3 is a two-dimensional electron gas thin layer formed on the top of the epitaxial layer 2 when electricity is applied; the n-AlGaN barrier layer 4 is located on the upper layer of the drift layer 3; n+-GaN The barrier layer 5 is located on the upper layer of the substrate layer 1 and on the left side of the epitaxial layer 2;...
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