30 results about "IMPATT diode" patented technology

In a non-insulated DC-DC converter having a circuit in which a power MOS•FET high-side switch and a power MOS•FET low-side switch are connected in series, the power MOS•FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS•FET GF low-side switch are formed within one semiconductor chip. The formation region SDR of the Schottky barrier diode is disposed in the center in the shorter direction of the semiconductor chips and on both sides thereof, the formation regions of the power MOS•FET low-side switch are disposed. From the gate finger in the vicinity of both long sides on the main surface of the semiconductor chip toward the formation region SDR of the Schottky barrier diode, a plurality of gate fingers are disposed so as to interpose the formation region SDR between them.

The invention relates to an integrated semiconductor component for high-frequency measurements and to the use thereof. It is provided that the semiconductor component is a component of a semiconductor circuit (10) comprising a first silicon layer (12), an adjoining silicon dioxide layer (insulating layer (14)) and a subsequent further silicon layer (structured layer (16)) (SOI wafer), and the semiconductor component comprises an IMPATT oscillator (30), having a resonator (24) which includes a metallized cylinder (18) of silicon, disposed in the structured layer (16); a coupling disk (28) covering the cylinder (18) in the region of the first layer (12); and an IMPATT diode (32), communicating with the cylinder (18) of the resonator (24) via a recess (38) in the coupling disk (28); and a reference oscillator (46) of lower frequency, having a resonator (24) which includes a metal cylinder (18) of silicon, disposed in the structured layer (16), and coupling disk (28) covering the cylinder in the region of the first layer (12); and a microwave conductor, communicating with the cylinder (18) of the resonator (24) via a recess (38) in the coupling disk (28), and the reference oscillator, via an active oscillator circuit (58), serves the purpose of frequency stabilization of the IMPATT oscillator (30); with integrated Schottky diodes; and a transmitting and receiving antenna (49).

The invention relates to an IMPATT diode with double heterojunctions and a composite passivation layer. The IMPATT diode with the double heterojunctions and the composite passivation layer includes asubstrate layer, an epitaxial layer, an ohmic contact layer, a first drift region, a second drift region, an avalanche region, ohmic contact electrodes, a first passivation layer, a second passivationlayer, and a Schottky contact electrode; the epitaxial layer is located on the upper layer of the substrate layer; the ohmic contact layer is located on the upper layer in the middle of the epitaxiallayer; the first drift region is located on the upper layer in the middle of the ohmic contact layer; the second drift region is located on the upper layer of the first drift region; the avalanche region is located on the upper layer of the second drift region; the ohmic contact electrodes are located on both sides of the ohmic contact layer and the upper layer of both sides of the ohmic contactlayer; the first passivation layer is located on the upper layer of the ohmic contact layer and the upper layer of the ohmic contact electrodes, and is located on both sides of the first drift region,on both sides of the second drift region, and on both sides of the avalanche region; the second passivation layer is located on the upper layer of the first passivation layer; and the Schottky contact electrode is located on the upper layer of the avalanche region and the upper layer of the second passivation layer. The IMPATT diode with the double heterojunctions and the composite passivation layer provided by the invention increases the carrier ionization rate in the avalanche region, and the avalanche effect is limited to avalanche region; therefore, the avalanche region width is reduced,and the power output capability is improved.

The embodiment of the invention discloses a GaN / SiC heterojunction lateral light-control IMPATT diode and a fabrication method thereof. The fabrication method comprises the steps of firstly, determining crystal structures and material parameters of n-type GaN and p-type SiC, and calculating lengths of an n region and a p region according to a working efficiency of a target IMPATT diode; secondly,selecting a current crystal form (p) SiC crystal as a substrate, respectively forming an n<+> well , an n well and a p<+> well on the substrate according to the lengths of the n region and the p region, and growing current crystal form (n<+>)GaN, (n)GaN and (p<+>)SiC in the corresponding wells; thirdly, oxidizing a Ga2O3 protection layer and a SiO2 protection layer, covering a shielding layer, respectively etching a first gap and a second gap, and generating a positive electrode and a negative electrode; and finally, etching a third gap, and introducing illumination to control the performanceof the target IMPATT diode to obtain the target IMPATT diode. By implementing the fabrication method, the target IMPATT diode can be controlled by visible light and ultraviolet light.

The invention discloses a SiC / Si heterojunction lateral photosensitive IMPATT diode and a preparation method thereof. The preparation method comprises the steps of: firstly, determining an SiC crystalform and material parameters, combining a working frequency of a target IMPATT diode, and calculating widths of an n-type region and a p-type region; secondly, selecting a p-type Si single crystal wafer of a certain thickness, preparing an n well, an n+ well and a p+ well in the selected Si single crystal wafer respectively according to the widths of the n-type region and the p-type region, and growing the crystal form SiC in the n well and the n+ well; thirdly, preparing an SiO2 protective layer through oxidization, coating a light shielding layer of an appropriate thickness thereon, and etching first and second gaps which form electrodes and a third gap which is used for introducing illumination to regulate and control performance of the IMPATT diode; and finally generating electrodes to obtain the target IMPATT diode. The SiC / Si heterojunction lateral photosensitive IMPATT diode and the preparation method thereof have the advantages of monolithic integration and series combination,and are prone to realize the entrance of illumination into an avalanche region of the IMPATT diode to affect its performance.

The invention relates to an IMPATT (impact avalanche and transit time) diode clamping fastening apparatus, and aims to solve the problem existing in clamping and fastening of the IMPATT diode of a 3mm waveband microwave device based on an IMPATT diode technology. The apparatus adopts a unique clamping ring design; stress is applied to the tube shell bottom of the IMPATT diode through an adjusting double-screw bolt so as to realize position readjustment of the IMPATT diode; the two ends of the clamping ring adopt tapered structures, and the tapered parts are subjected to slotting processing; when stress is applied to a locking ring and the clamping ring through a fastening bolt, the tapered slotted position of the clamping ring is subjected to tiny deformation so as to tightly lock the IMPATT diode, so that the clamping and fastening function for the IMPATT diode is realized; a good thermal conducting function of the IMPATT diode to the outside is realized through reasonable type selection of the clamping material, control of the assembling gap, and control of the thermal conductivity of the apparatus; and compared with the existing IMPATT diode clamping and fastening apparatus, the MPATT diode clamping and fastening apparatus provided by the invention has the advantages of high adjustment, high reliability, high thermal conductivity, miniaturization, and the like.

A method to integrate a vertical IMPATT diode in a planar process.

The invention relates to a W wave band frequency stabilizing oscillator based on an impact avalanche and transit time (IMPATT) diode. The oscillator is realized by adopting a cavity structure, and mainly comprises a main oscillator cavity, a frequency stabilizing cavity, an isolator and a feed system. The IMPATT diode is embedded into the interior of a cone-shaped snap ring, and the IMPATT diode can be fixed in the cone-shaped snap ring through the elasticity of the head of the snap ring. The complete snap ring is positioned inside the main oscillator cavity, the upper part of the snap ring is fixed through a feed rod in the feed system, and the lower part of the snap ring is fixed by adjusting a double-screw bolt. The snap ring can be firmly clamped in such manner. Moreover, a spring is configured in the feed system, and when the double-screw bolt at the bottom of the snap ring is adjusted, the spring can be elastic correspondingly so as to change the position of the IMPATT diode inside the main oscillator cavity. One end of the main oscillator cavity is directly connected with the frequency stabilizing cavity so as to improve the frequency stability of oscillation. The other end of the main oscillator cavity is directly output after being connected with the isolator, so that the interference of an external system for oscillator performance can be greatly reduced through the addition of the isolator.

A high frequency oscillator for an integrated semiconductor circuit is a component of the semiconductor circuit, which is comprised of a first silicon layer, an adjoining silicon dioxide layer (insulation layer), and an additional subsequent silicon layer (structured layer), (SOI wafer), wherein the high frequency oscillator is comprised of a resonator with a metallized cylinder made of silicon disposed in the structured layer and a coupling disk that overlaps the cylinder in the vicinity of the layer, and an IMPATT diode that is connected to the cylinder of the resonator via a recess in the coupling disk.

The invention relates to a high frequency oscillator for an integrated semiconductor circuit and its use. The invention proposes that the high frequency oscillator (30) be a component of the semiconductor circuit (10), which is comprised of a first silicon layer (12), an adjoining silicon dioxide layer (insulation layer (14)), and an additional subsequent silicon layer (structured layer (16)), (SOI wafer), wherein the high frequency oscillator (30) is comprised of (a) a resonator (24) with a metallized cylinder (18) made of silicon disposed in the structured layer (16) and a coupling disk (28) that overlaps the cylinder (18) in the vicinity of the layer (12), and (b) an IMPATT diode (32) that is connected to the cylinder (18) of the resonator (24) via a recess (38) in the coupling disk (28).

The invention discloses a GaN / Si heterojunction lateral light-operated IMPATT diode and a preparation method thereof. The method comprises the following steps: firstly, determining the crystal form, material parameters and p-type Si material parameters of n-type GaN, and calculating the lengths of an n region and a p region according to the working frequency of a target IMPATT diode; secondly, selecting a current crystal form (p) Si wafer as a substrate, respectively forming n +, n and p + wells on the substrate according to the lengths of the n region and the p region, and growing current crystal forms (n +) GaN, (n) GaN and (p +) Si in the corresponding wells; then, oxidizing to form a Ga2O3 and SiO2 protective layer, covering a shading layer, and respectively etching a first gap and a second gap to generate a positive electrode and a negative electrode; and finally, etching a third gap, introducing illumination to regulate and control the performance of the target IMPATT diode to obtain the target IMPATT diode. By implementing the IMPATT diode, the performance of the target IMPATT diode can be regulated and controlled by visible light and purple light.

The invention relates to an IMPATT diode with double heterojunctions and a composite passivation layer. The IMPATT diode with the double heterojunctions and the composite passivation layer includes asubstrate layer, an epitaxial layer, an ohmic contact layer, a first drift region, a second drift region, an avalanche region, ohmic contact electrodes, a first passivation layer, a second passivationlayer, and a Schottky contact electrode; the epitaxial layer is located on the upper layer of the substrate layer; the ohmic contact layer is located on the upper layer in the middle of the epitaxiallayer; the first drift region is located on the upper layer in the middle of the ohmic contact layer; the second drift region is located on the upper layer of the first drift region; the avalanche region is located on the upper layer of the second drift region; the ohmic contact electrodes are located on both sides of the ohmic contact layer and the upper layer of both sides of the ohmic contactlayer; the first passivation layer is located on the upper layer of the ohmic contact layer and the upper layer of the ohmic contact electrodes, and is located on both sides of the first drift region,on both sides of the second drift region, and on both sides of the avalanche region; the second passivation layer is located on the upper layer of the first passivation layer; and the Schottky contact electrode is located on the upper layer of the avalanche region and the upper layer of the second passivation layer. The IMPATT diode with the double heterojunctions and the composite passivation layer provided by the invention increases the carrier ionization rate in the avalanche region, and the avalanche effect is limited to avalanche region; therefore, the avalanche region width is reduced,and the power output capability is improved.

The invention provides a wide bandgap semiconductor heterojunction transit time diode noise detection method and system. The method comprises the steps that: a to-be-detected diode (DUT) is obtained,corresponding noise factors which comprise an ionization avalanche effect, a quantum effect and a field tunneling effect are selected, and a preset continuity equation, a current density equation anda Poisson equation are corrected, wherein the DUT is a collision ionization avalanche transit time IMPATT diode or a mixed tunneling avalanche transit time MITATT diode; the DUT model is gridded, andan equation set consisting of the corrected continuity equation, current density equation and Poisson equation is discretized; the discretized equation set is solved, so that a structure, steady-stateperformance and alternating-current performance can be obtained; and a noise model is constructed, and the structure, steady-state performance and alternating-current performance parameter values areimported into the noise model and boundary conditions so as to be subjected to double iterative computation to obtain a noise parameter value of the DUT. With the wide bandgap semiconductor heterojunction transit time diode noise detection method and system of the embodiment of the invention adopted, the noise detection precision of the DUT can be improved.

The invention relates to a high-frequency high-power IMPATT tube electrical parameter debugging device, which comprises a mounting plate, wherein a group of pin mounting holes and waveguide holes are formed in the mounting plate, and the pin mounting holes are connected with positioning pins; an adjusting base is arranged, positioning holes matched with the positioning pins and positioning grooves matched with the outer contour of a tool piece are formed in one side of the adjusting base, the other side of the adjusting base is connected with a clamping device with adjustable tightness, a penetrating through hole groove corresponding to the waveguide holes in position is formed in the clamping device, and a short-circuit piston is matched in the through hole groove; and the adjusting base positions the tool piece through the positioning pins and the positioning grooves and then is detachably and fixedly connected with the mounting plate, and an excitation source feeder line of the tool piece is electrically connected with an excitation source module. The IMPATT tube electrical parameter debugging device is simple in structure and easy to assemble, and high-frequency power output of an IMPATT diode is achieved by combining the combined action of mechanical tuning of the short-circuit piston and electric tuning of excitation source feed; and by adjusting the tightness of the clamping device, mechanical tuning thickness adjustment is achieved, the overall operation is simple and easy to implement, and the debugging efficiency is improved.

The invention provides a high-order frequency multiplier based on IMPATT diodes. In the frequency multiplier, the IMPATT diodes work in an avalanche breakdown mode, and their strong nonlinear characteristics generate high-order harmonics of the input signal f. The top adjustment plug and the T-shaped cavity short-circuit piston are used to make the high-order frequency multiplier efficiently generate n×f frequency. The top adjustment plug is located directly above the upper electrode of the IMPATT diode. By adjusting the top adjustment plug, the resonant frequency of the T-shaped cavity can be adjusted to the frequency n×f, and the output energy can be effectively output toward the output end of the T-shaped cavity. . The output of the T-shaped cavity is connected to the input terminal of the isolator, and the output terminal of the isolator is connected to the filter. The filter is used to separate the required output frequency n×f and suppress other harmonic frequencies. This invention provides a high-order frequency multiplier scheme for generating microwave fully coherent signals in different frequency bands (20GHz to 180GHz), different frequency multiplication times (3 to 30 times), and output power of tens of milliwatts.

The invention relates to the design of a feed circuit based on an IMPATT diode and is mainly used for feed and displacement debugging of a 3 mm microwave device based on the IMPATT diode. Through the unique design of upper and lower feeder pillars and a spring, and by utilizing different displacements of the spring under different moments, displacement debugging of the IMPATT diode is realized; through the introduction of an insulating spacer, short circuit due to contact of the feeder pillars and a cavity can be prevented; and through a quasi coaxial filter structure formed by dual metal rings and the feeder pillars, mutual interference between high-frequency signals and DC bias signals can be prevented. Compared with an existing feed circuit based on the IMPATT diode, the feed circuit based on the IMPATT diode in the invention has the advantages of being easy to assemble, adjustable, resistant to interference and small and the like.

The embodiment of the invention discloses a GaN / SiC heterojunction lateral light control IMPATT diode and a preparation method thereof. First, determine the crystal structure and material parameters of n-type GaN and p-type SiC, and calculate the lengths of the n-region and p-region according to the operating frequency of the target IMPATT diode; secondly, select the current crystal type (p) SiC wafer as the substrate, , the length of the p region are respectively formed on the substrate n + , n, p + well, and grow the current crystal form in the corresponding well (n + )GaN, (n)GaN, (p + ) SiC; then, oxidized Ga 2 o 3 , SiO 2 The protective layer covers the light-shielding layer, and the first and second gaps are respectively etched to form positive and negative electrodes; finally, the third gap is etched, and light is introduced to regulate the performance of the target IMPATT diode to obtain the target IMPATT diode. The implementation of the present invention can realize the target IMPATT diode of visible light and violet light regulation.

The invention discloses a homotype heterostructure IMPATT diode and a manufacturing method thereof. The IMPATT diode comprises an n-type GaN substrate, an n++-GaN cathode ohmic contact layer, an n-GaNdrift region, an n+-GaN avalanche region, an n++-InGaN anode ohmic contact layer and an anode which are sequentially arranged from bottom to top. The passivation layer is located outside the anode, and the cathode is located on the upper layer of an annular table top formed by the n++-GaN cathode ohmic contact layer2 and located outside the passivation layer. Compared with a traditional GaN-basedIMPATT diode, the homotype heterostructure IMPATT diode adopting the homotype heterogeneous material has the advantages that the limitation of a P-type GaN doping process is avoided, the efficiency of the IMPATT diode is linearly improved along with the increase of the doping concentration of an InGaN material, and high conversion efficiency is realized; according to the invention, n-type semiconductor materials are adopted, i.e., n-type doping is adopted, so that the efficiency of the manufacturing process is improved, the manufacturing cost is reduced, and meanwhile, the manufacturing process is completely compatible with the traditional IMPATT diode packaging process.

The invention discloses a high-frequency IMPATT diode mesa die structure. The high-frequency IMPATT diode mesa die structure comprises a p+ conductive substrate; a mesa die is arranged on the top surface of the p+ conductive substrate. The high-frequency IMPATT diode mesa die structure is characterized in that a vertical through hole is formed in the center of the mesa die, so that the mesa die forms an annular circular truncated cone shape. During preparation, an n-type epitaxial layer, a p-type epitaxial layer and a p+ epitaxial layer are grown on an n+ silicon wafer; donor impurities n are doped into the n-type epitaxial layer, and acceptor impurities p are doped into the p-type epitaxial layer; a p+ electrode enhancement layer is prepared on the surface of the p+ epitaxial layer; the n+ silicon wafer is thinned; an n+ electrode enhancement layer is prepared on the thinned surface of the n+ silicon wafer; and corrosion is performed from the n+ electrode enhancement layer to the p+ epitaxial layer through photoetching and corrosion processes according to the design pattern of the mesa die to obtain the high-frequency IMPATT diode mesa die structure. The structure can well reduce additional equivalent resistance introduced by a skin effect in a high-frequency working state of a device, increase the output power of the device in the high-frequency working state, and improve the reliability of the device.