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gan/sic heterojunction lateral light control impatt diode and its preparation method

A heterojunction and diode technology, applied in the field of GaN/SiC heterojunction lateral type light-controlled IMPATT diode and its preparation, to achieve the effect of changing the transport

Active Publication Date: 2020-04-14
WENZHOU UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The recently developed AlGaN / SiC heterojunction axial IMPATT diode shows excellent application prospects [S. Banerjee, Journal of Semiconductors, 2015, 36(6): 064002-1-8.], which has a higher performance than Si homojunction devices. More excellent large-signal performance, but there is no report on GaN / SiC heterojunction lateral type light-controlled IMPATT diode

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  • gan/sic heterojunction lateral light control impatt diode and its preparation method

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Embodiment Construction

[0050] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0051] Such as figure 1 Shown is an n / p-type GaN / SiC heterojunction lateral type light-controlled IMPATT diode and its preparation method provided in Embodiment 1 of the present invention. The method includes the following steps:

[0052] Step a1, obtain the current crystal form of GaN and SiC and their corresponding material parameters, combine the material parameters of GaN and SiC of the current crystal form with the operating frequency of the target IMPATT diode, and calculate the n region and p of the target IMPATT diode the length of the zone;

[0053] Step a2, select a p-type doped SiC waf...

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Abstract

The embodiment of the invention discloses a GaN / SiC heterojunction lateral light control IMPATT diode and a preparation method thereof. First, determine the crystal structure and material parameters of n-type GaN and p-type SiC, and calculate the lengths of the n-region and p-region according to the operating frequency of the target IMPATT diode; secondly, select the current crystal type (p) SiC wafer as the substrate, , the length of the p region are respectively formed on the substrate n + , n, p + well, and grow the current crystal form in the corresponding well (n + )GaN, (n)GaN, (p + ) SiC; then, oxidized Ga 2 o 3 , SiO 2 The protective layer covers the light-shielding layer, and the first and second gaps are respectively etched to form positive and negative electrodes; finally, the third gap is etched, and light is introduced to regulate the performance of the target IMPATT diode to obtain the target IMPATT diode. The implementation of the present invention can realize the target IMPATT diode of visible light and violet light regulation.

Description

technical field [0001] The invention relates to the technical field of electronic transistors, in particular to a GaN / SiC heterojunction lateral light-controlled IMPATT (Impact Avalanche and Transist-Time) diode and a preparation method thereof. Background technique [0002] The third-generation wide-bandgap semiconductor materials represented by direct bandgap gallium nitride (GaN) and indirect bandgap silicon carbide (SiC) are characterized by wide bandgap, high breakdown critical field strength, high saturation velocity and high thermal conductivity. And other characteristics become ideal materials for high-frequency, high-temperature, high-voltage, high-power and radiation-resistant electronic devices. GaN's Baliga figure of merit BFOM (Baliga figure of merit), electron mobility and other parameters are higher than the corresponding values ​​of SiC [R.S.Pengelly, et al, IEEE Transactions on Microwave Theory and Techniques, 2012, 60(6): 1764-1783.], It is suitable for hi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/107H01L31/0352H01L31/0336
CPCH01L31/0336H01L31/035281H01L31/1075H01L31/18Y02P70/50
Inventor 韦文生郑君鼎俞珠颖
Owner WENZHOU UNIVERSITY
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